FDS3992 ,N-Channel PowerTrench ?MOSFET 100V, 4.5A, 62mOhmFDS3992August 2002FDS3992®N-Channel PowerTrench MOSFET100V, 4.5A, 62mΩ
FDS4070N3 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4070N3 ,40V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 15.3 A, 40 V. R = 7.5 mΩ @ V = 10 V DS(ON) GSs ..
FDS4070N7 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4072N3 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4080N3 ,40V N-Channel Bottomless TM PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FQB6N50 ,500V N-Channel MOSFET
FQB6N50TM ,500V N-Channel QFET
FQB6N50TM ,500V N-Channel QFET
FQB6N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 6.2A, 600V, R = 1.5Ω @V = 10 VDS(on) ..
FQB6N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 5.5A, 600V, R = 2.0Ω @V = 10 VDS(on) ..
FQB6N60TM ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 6.2A, 600V, R = 1.5Ω @V = 10 VDS(on) ..
FDS3992
N-Channel PowerTrench ?MOSFET 100V, 4.5A, 62mOhm
FDS3992 August 2002 FDS3992 ® N-Channel PowerTrench MOSFET 100V, 4.5A, 62mΩ Features Applications r = 54mΩ (Typ.), V = 10V, I = 4.5A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 11nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode RR High Voltage Synchronous Rectifier Optimized efficiency at high frequencies Direct Injection / Diesel Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) 42V Automotive Load Control Formerly developmental type 82745Electronic Valve Train Systems (1) (8) Branding Dash (2) (7) 5 1 (3) (6) 2 (4) (5) 3 4 SO-8 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GS Drain Current o o 4.5 A Continuous (T = 25 C, V = 10V, R = 50 C/W) A GS θJA I D o o Continuous (T = 100 C, V = 10V, R = 50C/W) 2.8 A A GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 167 mJ AS Power dissipation 2.5 W P D o o Derate above 25C20mW/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 C/W θJA o R Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85 C/W θJA o R Thermal Resistance, Junction to Case (Note 2) 25 C/W θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS3992 FDS3992 SO-8 330mm 12mm 2500 units ©2002 FDS3992 Rev. A
