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FDS3890FAIRCHIL ?N/a10avai80V N-Channel Dual PowerTrench MOSFET


FDS3890 ,80V N-Channel Dual PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed 4.7 A, 80 V. R = 44 mΩ @ V = 10 V DS(ON) GSspecifi ..
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FDS3890
80V N-Channel Dual PowerTrench MOSFET
FDS3890 February 2001 FDS3890     80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.7 A, 80 V. R = 44 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 50 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • High performance trench technology for extremely R specifications. The result is a MOSFET that is DS(ON) low R DS(ON) easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall • High power and current handling capability efficiency. D1 5 4 D1 D2 Q1 6 3 D2 7 2 Q2 G1 8 1 S1 SO-8 G2 S2 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 80 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1a) 4.7 A D – Pulsed 20 Power Dissipation for Dual Operation 2 P W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 θJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 40 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3890 FDS3890 13’’ 12mm 2500 units FDS3890 Rev B(W) 2001
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