FDS3690 ,100V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 4.2 A, 100 V. R = 64 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDS3690 ,100V N-Channel PowerTrench MOSFETApplications• DC/DC converter• Motor DriverD5 4DD6D 37 2GS18SSO-8 SoAbsolute Maximum Ratings ..
FDS3692 ,Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 PackageFDS3692September 2002FDS3692®N-Channel PowerTrench MOSFET100V, 4.5A, 60mΩ
FDS3812 ,80V N-Channel Dual PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed 3.4 A, 80 V. R = 74 mΩ @ V = 10 V DS(ON) GSspecifi ..
FDS3890 ,80V N-Channel Dual PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed 4.7 A, 80 V. R = 44 mΩ @ V = 10 V DS(ON) GSspecifi ..
FDS3992 ,N-Channel PowerTrench ?MOSFET 100V, 4.5A, 62mOhmFDS3992August 2002FDS3992®N-Channel PowerTrench MOSFET100V, 4.5A, 62mΩ
FQB60N03L ,30V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 60A, 30V, R = 0.0135Ω @V = 10 VDS(on) ..
FQB630 ,200V N-Channel MOSFET
FQB65N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB65N06TM ,60V N-Channel QFET Mosfetapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB6N40 ,400V N-Channel MOSFET
FQB6N40C ,400V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 6A, 400V, R = 1.0 Ω @V = 10 VDS(on) ..
FDS3690
100V N-Channel PowerTrench MOSFET
FDS3690 January 2001 FDS3690 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 4.2 A, 100 V. R = 64 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 71 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Low gate charge R specifications. The result is a MOSFET that is DS(ON) easy and safer to drive (even at very high frequencies), • High performance trench technology for extremely and DC/DC power supply designs with higher overall low R DS(ON) efficiency. • High power and current handling capability Applications • DC/DC converter • Motor Driver D 5 4 D D 6 D 3 7 2 G S 1 8 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 100 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1a) 4.2 A D – Pulsed 20 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 θJA Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W R θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3690 FDS3690 13’’ 12mm 2500 units 2001 Fairchild Semiconductor International FDS3690 Rev C(W)
