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FDS3672_NLFAIRCHILN/a15000avaiDiscrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 Package


FDS3672_NL ,Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 PackageApplicationsr = 19mΩ (Typ.), V = 10V, I = 7.5A  DC/DC converters and Off-Line UPSDS(ON) GS DQ (t ..
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FDS3672_NL
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 Package
FDS3672 March 2003 FDS3672 ® N-Channel PowerTrench MOSFET 100V, 7.5A, 22mΩ Features Applications r = 19mΩ (Typ.), V = 10V, I = 7.5A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 28nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode RR High Voltage Synchronous Rectifier Optimized efficiency at high frequencies Direct Injection / Diesel Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) 42V Automotive Load Control Formerly developmental type 82763Electronic Valve Train Systems Branding Dash 5 4 6 3 5 1 7 2 2 3 8 1 4 SO-8 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GS Drain Current o o 7.5 A Continuous (T = 25 C, V = 10V, R = 50 C/W) A GS θJA I D o o Continuous (T = 100 C, V = 10V, R = 50C/W) 4.8 A A GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 416 mJ AS Power dissipation 2.5 W P D o o Derate above 25C20mW/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 C/W θJA o R Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85 C/W θJA o R Thermal Resistance, Junction to Case (Note 2) 25 C/W θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS3672 FDS3672 SO-8 330mm 12mm 2500 units ©2003 FDS3672 Rev. B
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