FDS3601 ,100V Dual N-Channel PowerTrench MOSFETFeaturesThese N-Channel MOSFETs have been designed• 1.3 A, 100 V. R = 480 mΩ @ V = 10 VDS(ON) GSsp ..
FDS3601_NL ,100V Dual N-Channel PowerTrench MOSFETFeaturesThese N-Channel MOSFETs have been designed• 1.3 A, 100 V. R = 480 mΩ @ V = 10 VDS(ON) GSsp ..
FDS3612 ,100V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 3.4 A, 100 V. R = 120 mΩ @ V = 10 V DS(ON) GSspe ..
FDS3612 ,100V N-Channel PowerTrench MOSFETApplications • DC/DC converter • Motor Driver DD5 4DD6 37 2GS8 1SSO-8 S oAbsolute Maximum Ratings ..
FDS3670 ,100V N-Channel PowerTrench MOSFETFDS3670November 2000FDS3670 100V N-Channel PowerTrench MOSFET
FDS3670 ,100V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 6.3 A, 100 V. R = 32 mΩ @ V = 10 VDS(ON) GSspecifi ..
FQB58N08 ,80V N-Channel MOSFET
FQB5N20L ,200V LOGIC N-Channel MOSFET
FQB5N20LTM ,200V N-Channel Logic Level QFET
FQB5N20TM ,200V N-Channel QFET
FQB5N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 5A, 500V, R = 1.4 Ω @V = 10 VDS(on) ..
FQB5N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 4.8A, 800V, R = 2.6Ω @V = 10 VDS(on) ..
FDS3601
100V Dual N-Channel PowerTrench MOSFET
FDS3601 August 2001 FDS3601 100V Dual N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs have been designed • 1.3 A, 100 V. R = 480 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 530 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Low gate charge (3.7nC typical) R specifications. The result is a MOSFET that is DS(ON) easy and safer to drive (even at very high frequencies), • High performance trench technology for extremely and DC/DC power supply designs with higher overall low R DS(ON) efficiency. • High power and current handling capability D1 5 4 D1 D2 Q1 6 3 D2 7 2 Q2 G1 8 1 S1 SO-8 G2 S2 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 100 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) 1.3 A D – Pulsed 6 P W D Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3601 FDS3601 13’’ 12mm 2500 units 2001 FDS3601 Rev C(W)
