FDS2570 ,150V N-Channel PowerTrench MOSFETFDS2570February 2001FDS2570 150V N-Channel PowerTrench MOSFET
FDS2570 ,150V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 4A, 150 V. R = 80 mΩ @ V = 10 VDS(ON) GSspecifical ..
FDS2572 ,150V, 0.047 Ohms, 4.9A, N-Channel UltraFET ?Trench MOSFETFeatures®UltraFET devices combine characteristics that enable • R = 0.040W (Typ.), V = 10V DS(ON) ..
FDS2582 ,Discrete Commercial N-Channel UltraFET TRENCH MOSFET, 150V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 PackageFDS2582September 2002FDS2582®N-Channel PowerTrench MOSFET150V, 4.1A, 66mΩ
FDS2670 ,200V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 3.0 A, 200 V. R = 130 mΩ @ V = 10 VDS(ON) GSspecif ..
FDS2672 ,200V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 70mΩ at V = 10V, I = 3.9A This single N-Channel MOSFET is produced usi ..
FQB34N20 ,200V N-Channel MOSFET
FQB34N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 31A, 200V, R = 0.075Ω @V = 10 VDS(on) ..
FQB34N20LTM ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect • 31A, 200V, R = 0.075Ω @V = 10 VDS(on) ..
FQB34P10 ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB34P10TM ,100V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -33.5A, -100V, R = 0.06Ω @V = -10 VDS ..
FQB3N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, R = 2.2Ω @V = 10 VDS(on) ..
FDS2570
150V N-Channel PowerTrench MOSFET
FDS2570 February 2001 FDS2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 4A, 150 V. R = 80 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 90 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Low gate charge These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Fast switching speed R specifications. DS(ON) • High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low R DS(ON) (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • High power and current handling capability D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 150 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 4A D 30 – Pulsed Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJA °C/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS2570 FDS2570 13’’ 12mm 2500 units 2001 FDS2570 Rev C(W)
