FDR6678A ,30V N-Channel PowerTrench MOSFETApplications • High power and current in a smaller footprint than • DC/DC converter SO-8 SD5 4DS6 ..
FDR8305N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplications• Load switch High performance trench technology for extremely Motor driving lo ..
FDR8308P ,Dual P-Channel, Logic Level, PowerTrench TM MOSFETElectrical Characteristics (T = 25 C unless otherwise noted )AV Vo oI C CΔ / ΔTJI V V µ AT µ AI VI ..
FDR8321L ,P-Channel MOSFET With Gate Driver For Load Switch ApplicationGeneral DescriptionMOSFET With Gate Driver For Load Switch Application21 (TAI V 5 V 1 µ A )V V V V ..
FDR836P ,P-Channel 2.5V Specified MOSFETFeaturesTM SuperSOT -8 P-Channel enhancement mode power -6.1 A, -20 V. R = 0.030 W @ V = -4.5 VOND ..
FDR838P ,P-Channel 2.5V Specified PowerTrench TM MOSFETGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced• -8 A, -20 V. R = 0.017 Ω @ ..
FQB140N03L ,30V LOGIC N-Channel MOSFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FQB14N30 ,150V N-Channel MOSFET
FQB14N30TM ,300V N-Channel QFET
FQB14N30TM ,300V N-Channel QFET
FQB15P12 ,120V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB16N15TM ,150V N-Channel QFET
FDR6678A
30V N-Channel PowerTrench MOSFET
FDR6678A April 2001 FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 7.5 A, 30 V. R = 24 mΩ @ V = 4.5V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 20 mΩ @ V = 10 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely “high side” synchronous rectifier operation, providing an extremely low R and fast switching in a small low R DS(ON) DS(ON) package. • Fast switching, low gate charge Applications • High power and current in a smaller footprint than • DC/DC converter SO-8 S D 5 4 D S 6 3 7 2 G D 8 1 TM D SuperSOT -8 D o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) 7.5 A D – Pulsed 40 Power Dissipation for Single Operation (Note 1a) 1.8 P W D (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 70 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 20 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .6678A FDR6678A 13’’ 12mm 2500 units FDR6678A Rev C(W) 2001
