FDQ7238AS ,30V Dual Notebook Power Supply N-Channel PowerTrench?in SO-14 PackageFeatures The FDQ7238AS is designed to replace two single SO-• Q2: 14 A, 30V. R = 8.7 mΩ @ V = 10V D ..
FDQ7238S ,Dual Notebook Power Supply N-Channel PwerTrench in SO-14 PackageFeatures The FDQ7238S is designed to replace two single SO-8 · Q2: 14 A, 30V. R = 9.5 mW @ V = 10V ..
FDQ7244S ,Dual Notebook Power Supply N-Channel PowerTrench in SO-14 PackageElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FDQ7244S ,Dual Notebook Power Supply N-Channel PowerTrench in SO-14 PackageFeatures The FDQ7244S is designed to replace two single SO-8 · Q2: 14 A, 30V. R = 9.5 mW @ V = 10V ..
FDQ7698S ,Dual Notebook Power Supply N-Channel PowerTrench in SO-14 PackageElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FDR4410 ,N-Channel Enhancement Mode Field Effect TransistorFeaturesThe FDR4410 has been designed as a smaller, low cost9.3 A, 30 V. R = 0.013 Ω @ V = 10 V ..
FQB11N40C ,400V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 VD ..
FQB11N40CTM ,400V N-Channel Advance Q-FET C-SeriesFQB11N40C/FQI11N40C ®QFETFQB11N40C/FQI11N40C400V N-Channel MOSFET
FQB11N40TM ,400V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 11.4A, 400V, R = 0.48Ω @V = 10 VDS(on ..
FQB11P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -11.4A, -60V, R = 0.175Ω @V = -10 VDS ..
FQB11P06TM ,60V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -11.4A, -60V, R = 0.175Ω @V = -10 VDS ..
FQB12N20 ,200V N-Channel MOSFET
FDQ7238AS
30V Dual Notebook Power Supply N-Channel PowerTrench?in SO-14 Package
FDQ7238AS May 2008 FDQ7238AS ® Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package General Description Features The FDQ7238AS is designed to replace two single SO- • Q2: 14 A, 30V. R = 8.7 mΩ @ V = 10V DS(on) GS 8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on R = 10.5 mΩ @ V = 4.5V DS(on) GS reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using TM • Q1: 11 A, 30V. R = 13.2 mΩ @ V = 10V Fairchild’s SyncFET technology. The FDQ7238AS DS(on) GS includes a patented combination of a MOSFET R = 16 mΩ @ V = 4.5V DS(on) GS monolithically integrated with a Schottky diode. S2 S2 S2 G2 G1 SO-14 Vin pin 1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage V GSS ±20 ±20 I Drain Current - Continuous (Note 1a) 14 11 A D - Pulsed 50 50 P Power Dissipation for Single Operation (Note 1a & 1b) 2.4 1.8 W D (Note 1c & 1d) 1.3 1.1 T , T Operating and Storage Junction Temperature Range J STG −55 to +150 °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) 52 68 °C/W θJA (Note 1c & 1d) 94 118 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDQ7238AS FDQ7238AS 13” 16mm 2500 units FDQ7238AS Rev A1(X) ©2008
