FDPF7N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 6A, 1.15?Features Description•R = 0.95Ω ( Typ.)@ V = 10V, I = 3A These N-Channel enhancement mode power fiel ..
FDPF7N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 6A, 1.15?FDP7N50F / FDPF7N50F N-Channel MOSFET November 2007TMUniFETFDP7N50F / FDPF7N50F ..
FDPF7N50U ,N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 5A, 1.5?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 1.5 (Max.) ..
FDPF7N60NZ ,N-Channel UniFETTM II MOSFET 600V, 6.5A, 1.25?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyGGDTO-220D TO-2 ..
FDPF8N50NZ ,N-Channel UniFETTM II MOSFET 500V, 8A, 850m?Features DescriptionTM ®•R = 770 m (Typ.) @ V = 10 V, I = 4 A UniFET II MOSFET is Fairchild Semic ..
FDPF8N50NZ ,N-Channel UniFETTM II MOSFET 500V, 8A, 850m?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDDGGGGDDTO-220 ..
FQAF9N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.9A, 900V, R = 1.3Ω @V = 10 VDS(on) ..
FQAF9P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -7.1A, -250V, R = 0.62Ω @V = -10 VDS( ..
FQB10N20C ,200V N-Channel Advance QFET C-seriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQB10N20CTM ,200V N-Channel Advance QFET C-seriesFQB10N20C/FQI10N20C TMQFETFQB10N20C/FQI10N20C200V N-Channel MOSFET
FQB10N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 10A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQB10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FDPF7N50F
N-Channel UniFETTM FRFET?MOSFET 500V, 6A, 1.15?
FDP7N50F / FDPF7N50F N-Channel MOSFET November 2007 TM UniFET FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features Description •R = 0.95Ω ( Typ.)@ V = 10V, I = 3A These N-Channel enhancement mode power field effect transis- DS(on) GS D tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 15nC) DMOS technology. • Low C ( Typ. 6.3pF) rss This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- • Fast switching mance, and withstand high energy pulse in the avalanche and • 100% avalanche tested commutation mode. These devices are well suited for high effi- cient switching mode power supplies and active power factor • Improved dv/dt capability correction. • RoHS compliant D G TO-220F TO-220 G D S G D S FDPF Series FDP Series S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDP7N50F FDPF7N50F Units V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±30 V GSS o -Continuous (T = 25 C) 6 6* C I Drain Current A D o -Continuous (T = 100 C) 3.6 3.6* C I Drain Current - Pulsed (Note 1) 24 24* A DM E Single Pulsed Avalanche Energy (Note 2) 270 mJ AS I Avalanche Current (Note 1) 6 A AR E Repetitive Avalanche Energy (Note 1) 20 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 200 38.5 W C P Power Dissipation D o o - Derate above 25 C 1.59 0.3 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP7N50F FDPF7N50F Units R Thermal Resistance, Junction to Case 1.4 4.0 θJC o R Thermal Resistance, Junction to Ambient 0.5 - C/W θCS R Thermal Resistance, Junction to Ambient 62.5 62.5 θJA ©2007 1 FDP7N50F / FDPF7N50F Rev. A
