FDPF18N20FT ,N-Channel UniFETTM FRFET?MOSFET 200V, 18A, 140m?Features Description•R = 0.12Ω ( Typ.)@ V = 10V, I = 9A These N-Channel enhancement mode power fiel ..
FDPF18N50 ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.• LCD/LED/PD ..
FDPF18N50T ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.• LCD/LED/PD ..
FDPF20N50 ,N-Channel UniFETTM MOSFET 500V, 20A, 230m?Features Description• 20A, 500V, R = 0.23Ω @V = 10 V These N-Channel enhancement mode power field e ..
FDPF2710T ,N-Channel PowerTrench?MOSFET 250V, 25A, 42.5m?General Description DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon- • 25A, 25 ..
FDPF33N25T ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) ..
FQAF16N25 ,250V N-Channel MOSFET
FQAF17P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQAF19N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 11.2A, 600V, R = 0.38 Ω @ V = 10 VDS( ..
FQAF27N25 ,250V N-Channel MOSFET
FQAF28N15 ,150V N-Channel MOSFET
FQAF33N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDPF18N20FT
N-Channel UniFETTM FRFET?MOSFET 200V, 18A, 140m?
FDP18N20F / FDPF18N20FT N-Channel MOSFET September 2009 TM UniFET FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14Ω Features Description •R = 0.12Ω ( Typ.)@ V = 10V, I = 9A These N-Channel enhancement mode power field effect DS(on) GS D transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 20nC) stripe, DMOS technology. • Low C ( Typ. 24pF) rss This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- • Fast switching mance, and withstand high energy pulse in the avalanche and • 100% avalanche tested commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor • Improve dv/dt capability correction. • RoHS compliant D G TO-220 TO-220F G D S G D S FDP Series FDPF Series S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDP18N20F FDPF18N20FT Units V Drain to Source Voltage 200 V DSS V Gate to Source Voltage ±30 V GSS o -Continuous (T = 25 C) 18 18* C I Drain Current A D o -Continuous (T = 100 C) 10.8 10.8* C I Drain Current - Pulsed (Note 1) 72 72* A DM E Single Pulsed Avalanche Energy (Note 2) 324 mJ AS I Avalanche Current (Note 1) 18 A AR E Repetitive Avalanche Energy (Note 1) 10 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 100 41 W C P Power Dissipation D o o - Derate above 25 C 0.83 0.33 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP18N20F FDPF18N20FT Units R Thermal Resistance, Junction to Case 1.2 3.0 θJC o R Thermal Resistance, Case to Sink Typ. 0.5 - C/W θCS R Thermal Resistance, Junction to Ambient 62.5 62.5 θJA ©2009 1 FDP18N20F / FDPF18N20FT Rev. A
