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FDP8876FAIRCHILDN/a37avai30V N-Channel PowerTrench?MOSFET
FDP8876FAIRCHILN/a15avai30V N-Channel PowerTrench?MOSFET


FDP8876 ,30V N-Channel PowerTrench?MOSFETFeatures„ r = 8.5mΩ, V = 10V, I = 40ADS(ON) GS DThis N-Channel MOSFET has been designed specificall ..
FDP8876 ,30V N-Channel PowerTrench?MOSFET®FDP8876 N-Channel PowerTrench MOSFETNovember 2005FDP8876®N-Channel PowerTrench MOSFET 30V, 71A, 8. ..
FDP8880 ,30V N-Channel PowerTrench MOSFETApplications

FDP8876
30V N-Channel PowerTrench?MOSFET
® FDP8876 N-Channel PowerTrench MOSFET November 2005 FDP8876 ® N-Channel PowerTrench MOSFET 30V, 71A, 8.5mΩ General Descriptions Features „ r = 8.5mΩ, V = 10V, I = 40A DS(ON) GS D This N-Channel MOSFET has been designed specifically to „ r = 10.3mΩ, V = 4.5V, I = 40A DS(ON) GS D improve the overall efficiency of DC/DC converters using „ High performance trench technology for extremely low either synchronous or conventional switching PWM r DS(ON) controllers. It has been optimized for low gate charge, low „ Low gate charge r and fast switching speed. DS(ON) „ High power and current handling capability „ RoHS Compliant DRAIN D SOURCE (FLANGE) DRAIN GATE G TO-220AB S FDP SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 70 A Continuous (T = 25 C, V = 10V) C GS I D o Continuous (T = 25 C, V = 4.5V) 64 A C GS Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 180 mJ AS P Power dissipation 70 W D o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-263 2.14 C/W θJC 2 o R Thermal Resistance Junction to Ambient TO-263,1in copper pad area 62 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP8876 FDP8876 TO-220AB Tube N/A 50 units ©2005 1 FDP8876 Rev. A
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