FDP8447L ,40V N-Channel PowerTrench?MOSFETApplications Inverter Power SuppliesDGGDSTO-220FDP SeriesSMOSFET Maximum Ratings T = 25°C unless ..
FDP8860 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 2.5mΩ at V = 10V, I = 80AThis N-Channel MOSFET has been designed speci ..
FDP8870 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 4.1mΩ , V = 10V, I = 35ADS(ON) ..
FDP8874 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 5.3mΩ , V = 10V, I = 40ADS(ON) ..
FDP8876 ,30V N-Channel PowerTrench?MOSFETFeatures r = 8.5mΩ, V = 10V, I = 40ADS(ON) GS DThis N-Channel MOSFET has been designed specificall ..
FDP8876 ,30V N-Channel PowerTrench?MOSFET®FDP8876 N-Channel PowerTrench MOSFETNovember 2005FDP8876®N-Channel PowerTrench MOSFET 30V, 71A, 8. ..
FQA7N80C ,800V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 7.0A, 800V, R = 1.9Ω @V = 10 VDS(on) ..
FQA7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.4A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQA7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.4A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQA7N90 ,900V N-Channel MOSFETFQA7N90March 2001TMQFETFQA7N90900V N-Channel MOSFET
FQA7N90M ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7A, 900V, R = 1.8Ω @V = 10 VDS(on) GS ..
FQA8N100C ,N-Channel QFET?MOSFET 1000V, 8.0A, 1.45?Features Description 8A, 1000V, R = 1.45Ω @V = 10 V These N-Channel enhancement mode power field e ..
FDP8447L
40V N-Channel PowerTrench?MOSFET
® FDP8447L N-Channel PowerTrench MOSFET May 2007 FDP8447L tm ® N-Channel PowerTrench MOSFET 40V, 50A, 8.7mΩ Features General Description Max r = 8.7mΩ at V = 10V, I = 14A This N-Channel MOSFET has been produced using Fairchild DS(on) GS D Semiconductor’s proprietary PowerTrench technology to deliver Max r = 11.2mΩ at V = 4.5V, I = 11A DS(on) GS D low r and optimized BV capability to offer superior DS(on) DSS Fast Switching performance benefit in the application. RoHS Compliant Applications Inverter Power Supplies D G G D S TO-220 FDP Series S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 50 C -Continuous (Silicon limited) T = 25°C 65 C I A D -Continuous T = 25°C (Note 1) 12 A -Pulsed 100 E Drain-Source Avalanche Energy (Note 3) 153 mJ AS Power Dissipation T = 25°C 60 C P W D Power Dissipation T = 25°C (Note 1) 2 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.1 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1) 62.5 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP8447L FDP8447L TO-220AB Tube N/A 50units 1 ©2007 FDP8447L Rev.B
