FDP7042L ,N-Channel Logic Level PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 50 A, 30 V. R = 9 mΩ @ V = 4.5 V DS(ON) GSspecif ..
FDP7045L ,N-Channel Logic Level PowerTrench MOSFET ..
FDP75N08 , 75V N-Channel MOSFET
FDP7N50 ,N-Channel UniFET?MOSFET 500V, 7A, 900 m?Applicationslamp ballasts.• ALCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power Supply ..
FDP8447L ,40V N-Channel PowerTrench?MOSFETApplications Inverter Power SuppliesDGGDSTO-220FDP SeriesSMOSFET Maximum Ratings T = 25°C unless ..
FDP8860 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 2.5mΩ at V = 10V, I = 80AThis N-Channel MOSFET has been designed speci ..
FQA6N90C ,900V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 6A, 900V, R = 2.3Ω @V = 10 VDS(on) GS ..
FQA70N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQA70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 7.7A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQA7N80C ,800V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 7.0A, 800V, R = 1.9Ω @V = 10 VDS(on) ..
FQA7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.4A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FDP7042L
N-Channel Logic Level PowerTrench MOSFET
FDP7042L / FDB7042L April 2001 FDP7042L / FDB7042L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 50 A, 30 V. R = 9 mΩ @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 7.5 mΩ @ V = 10 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Critical DC electrical parameters specified at “low side” synchronous rectifier operation, providing an extremely low R . elevated temperature DS(ON) Applications • High performance trench technology for extremely low R DS(ON) • Synchronous rectifier • DC/DC converter • 175°C maximum junction temperature rating D D G G G S TO-263AB TO-220 D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ± 12 I Drain Current – Continuous (Note 1) 50 A D – Pulsed (Note 1) 150 P D Total Power Dissipation @ T = 25°C 83 W C Derate above 25°C 0.48 W°C T , T Operating and Storage Junction Temperature Range -65 to +175 J STG °C Thermal Characteristics R θJC Thermal Resistance, Junction-to-Case 1.8 °C/W R θJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB7042L FDB7042L 13’’ 24mm 800 units FDP7042L FDP7042L Tube n/a 45 FDP7042L Rev C(W) 2000
