FDP7030BLS ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 56 A, 30 V. R = 10.5 mΩ @ V = 10 V DS ..
FDP7030L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description
FDP7042L ,N-Channel Logic Level PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 50 A, 30 V. R = 9 mΩ @ V = 4.5 V DS(ON) GSspecif ..
FDP7045L ,N-Channel Logic Level PowerTrench MOSFET ..
FDP75N08 , 75V N-Channel MOSFET
FDP7N50 ,N-Channel UniFET?MOSFET 500V, 7A, 900 m?Applicationslamp ballasts.• ALCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power Supply ..
FQA5N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.8A, 900V, R = 2.3 Ω @ V = 10 VDS(on ..
FQA5N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.8A, 900V, R = 2.3 Ω @ V = 10 VDS(on ..
FQA5N90 ,900V N-Channel MOSFETSeptember 2000TMQFET QFET QFET QFETFQA5N90900V N-Channel MOSFET
FQA62N25C ,250V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 62A, 250V, R = 0.035Ω @V = 10 VDS(on) ..
FQA65N20 ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 65A, 200V, R = 0.032Ω @V = 10 VDS(on) ..
FQA65N20 ,200V N-Channel MOSFETFQA65N20August 2001TMQFETFQA65N20200V N-Channel MOSFET
FDP7030BL
N-Channel Logic Level PowerTrench ?MOSFET
July 1998 FDP7030BL/FDB7030BL ® N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 60 A, 30 V. R = 0.009 W @ V = 10 V, DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 0.0120 W @ V = 4.5 V. DS(ON) GS converters using either synchronous or conventional Critical DC electrical parameters specified at elevated switching PWM controllers. temperature. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R Rugged internal source-drain diode can eliminate the need DS(on) specifications. for an external Zener diode transient suppressor. The result is a MOSFET that is easy and safer to drive (even High performance trench technology for extremely low at very high frequencies), and DC/DC power supply designs R . DS(ON) with higher overall efficiency. 175°C maximum junction temperature rating. _________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FDP7030BL FDB7030BL Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current - Continuous (Note 1) 60 A D - Pulsed (Note 1) 180 P Total Power Dissipation @ T = 25°C 65 W D C Derate above 25°C 0.43 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG T Maximum lead temperature for soldering purposes, 275 °C L 1/8" from case for 5 seconds THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Case 2.3 °C/W JC q Thermal Resistance, Junction-to-Ambient 62.5 °C/W R JA q FDP7030BL Rev.C © 1998
