FDP5690 ,60V N-Channel PowerTrench TM MOSFETFDP5690/FDB5690July 2000FDP5690/FDB5690TM60V N-Channel PowerTrench MOSFET
FDP5690 ,60V N-Channel PowerTrench TM MOSFETFeatures• 32 A, 60 V. R = 0.027 Ω @ V = 10 VDS(ON) GSThis N-Channel MOSFET has been designed specif ..
FDP6030BL ,N-Channel Logic Level PowerTrench MOSFETFeatures• 40 A, 30 V. R = 0.018 Ω @ V = 10 VThis N-Channel Logic Level MOSFET has been designedDS(O ..
FDP6030L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description
FDP6035AL ,N-Channel Logic Level PowerTrench TM MOSFETJuly 1998 FDP6035AL/FDB6035AL TM N-Channel Logic Level PowerTrench MOSFET
FDP6035AL. ,N-Channel Logic Level PowerTrench TM MOSFETGeneral Description
FQA24N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 23.5A, 600V, R = 0.24 Ω @ V = 10 VDS( ..
FQA24N60 ,600V N-Channel MOSFETApril 2000TMQFET QFET QFET QFETFQA24N60600V N-Channel MOSFET
FQA26N30 ,300V N-Channel MOSFET
FQA27N25 ,250V N-Channel MOSFET
FQA27N25 ,250V N-Channel MOSFET
FQA28N50F ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 28.4A, 500V, R = 0.16Ω @V = 10 VDS(on ..
FDP5690
60V N-Channel PowerTrench TM MOSFET
FDP5690/FDB5690 FDP5690/FDB5690 TM 60V N-Channel PowerTrench MOSFET General Description Features • R.32 A, 60 V = 0.027 Ω @ V = 10 V GS This N-Channel MOSFET has been designed specifically R = 0.032 Ω @ V. = 6 V GS to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. temperature. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R.DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. High performance trench technology for extremely low . ° D D G G G TO-220 D FDP Series S TO-263AB S S FDB Series Absolute Maximum Ratings T = 25°C unless otherwise noted C FDP5690 FDB5690 Symbol Parameter Units V Drain-Source Voltage 60 V DSS ± VGSS Gate-Source Voltage 20 V I Maximum Drain Current - Continuous 32 A D - Pulsed 100 P D Total Power Dissipation @ T = 25°C 58 W C Derate above 25°C 0.4 W/°C T , T Operating and Storage Junction Temperature Range -65 to +175 °C J STG Thermal Characteristics ° R JC Thermal Resistance, Junction-to-Case 2.6 C/W θ R Thermal Resistance, Junction-to-Ambient 62.5 °C/W JA θ Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDB5690 FDB5690 13’’ 24mm 800 FDP5690 FDP5690 Tube N/A 45 2000 Fairchild Semiconductor InternationalvC . FDP5690/FDB5690 Re C maximum junction temperature rating. 175 DS(ON) R need for an external Zener diode transient suppressor Rugged internal source-drain diode can eliminate the Critical DC electrical parameters specified at evevated DS(ON) DS(ON) July 2000
