FDP55N06 ,N-Channel UniFETTM MOSFET 60V, 55A, 22m?Features Description• 55A, 60V, R = 0.022 Ω @V = 10 V These N-Channel enhancement mode power field ..
FDP55N06 ,N-Channel UniFETTM MOSFET 60V, 55A, 22m?FDP55N06/FDPF55N06 60V N-Channel MOSFETTMUniFETFDP55N06/FDPF55N0660V N-Channel MOSFET
FDP5645 ,60V N-Channel PowerTrench ?MOSFETFeaturesThis N-Channel MOSFET has been designed• 80 A, 60 V. R = 0.0095 Ω @ V = 10 VDS(ON) GSspecif ..
FDP5680 ,60V N-Channel PowerTrench TM MOSFET July 2000 ..
FDP5690 ,60V N-Channel PowerTrench TM MOSFETFDP5690/FDB5690July 2000FDP5690/FDB5690TM60V N-Channel PowerTrench MOSFET
FDP5690 ,60V N-Channel PowerTrench TM MOSFETFeatures• 32 A, 60 V. R = 0.027 Ω @ V = 10 VDS(ON) GSThis N-Channel MOSFET has been designed specif ..
FQA24N50F ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 24A, 500V, R = 0.2Ω @V = 10 VDS(on) G ..
FQA24N50F ,500V N-Channel MOSFETFQA24N50FSeptember 2001TMFRFETFQA24N50F500V N-Channel MOSFET
FQA24N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 23.5A, 600V, R = 0.24 Ω @ V = 10 VDS( ..
FQA24N60 ,600V N-Channel MOSFETApril 2000TMQFET QFET QFET QFETFQA24N60600V N-Channel MOSFET
FQA26N30 ,300V N-Channel MOSFET
FQA27N25 ,250V N-Channel MOSFET
FDP55N06
N-Channel UniFETTM MOSFET 60V, 55A, 22m?
FDP55N06/FDPF55N06 60V N-Channel MOSFET TM UniFET FDP55N06/FDPF55N06 60V N-Channel MOSFET Features Description • 55A, 60V, R = 0.022 Ω @V = 10 V These N-Channel enhancement mode power field effect DS(on) GS transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 30 nC) stripe, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to •Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the avalanche • Improved dv/dt capability and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G TO-220 TO-220F G D S G D S FDP Series FDPF Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FDP55N06 FDPF55N06 Units V Drain-Source Voltage 60 V DSS I - Continuous (T = 25°C) Drain Current 55 55 * A D C - Continuous (T = 100°C) 34.8 34.8 * A C I (Note 1) Drain Current - Pulsed 220 220 * A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 480 mJ AS I Avalanche Current (Note 1) 55 A AR E (Note 1) Repetitive Avalanche Energy 11.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 114 48 W D C - Derate above 25°C 0.9 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8∀ from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP55N06 FDPF55N06 Units R Thermal Resistance, Junction-to-Case 1.1 2.58 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θJS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2005 1 FDP55N06/FDPF55N06 Rev. A
