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FDP51N25FSCN/a20avaiN-Channel UniFETTM MOSFET 250V, 51A, 60m?
FDP51N25FAIRCHILN/a246avaiN-Channel UniFETTM MOSFET 250V, 51A, 60m?


FDP51N25 ,N-Channel UniFETTM MOSFET 250V, 51A, 60m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 60 m (Max.) ..
FDP51N25 ,N-Channel UniFETTM MOSFET 250V, 51A, 60m?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FDP52N20 ,N-Channel UniFETTM MOSFET 200V, 52A, 49m?Features DescriptionTM ®• UniFET MOSFET is Fairchild Semiconductor ’s high voltage I = 41 mΩ ( Typ ..
FDP52N20 ,N-Channel UniFETTM MOSFET 200V, 52A, 49m?Applications• PDP TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDGGDD GSSTO-220FTO- ..
FDP5500 , N-Channel UltraFET Power MOSFET 55V, 80A, 7mΩ
FDP55N06 ,N-Channel UniFETTM MOSFET 60V, 55A, 22m?Features Description• 55A, 60V, R = 0.022 Ω @V = 10 V These N-Channel enhancement mode power field ..
FQA22N30 ,300V N-Channel MOSFET
FQA22P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA24N50F ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 24A, 500V, R = 0.2Ω @V = 10 VDS(on) G ..
FQA24N50F ,500V N-Channel MOSFETFQA24N50FSeptember 2001TMFRFETFQA24N50F500V N-Channel MOSFET
FQA24N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect  23.5A, 600V, R = 0.24 Ω @ V = 10 VDS( ..
FQA24N60 ,600V N-Channel MOSFETApril 2000TMQFET QFET QFET QFETFQA24N60600V N-Channel MOSFET


FDP51N25
N-Channel UniFETTM MOSFET 250V, 51A, 60m?
TM FDP51N25/ FDPF51N25 N-Channel UniFET MOSFET March 2013 FDP51N25 / FDPF51N25 TM N-Channel UniFET MOSFET 500 V, 51 A, 60 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 60 m (Max.) @ V = 10 V, I = 25.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 55 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low Crss (Typ. 63 pF) energy strength. This device family is suitable for switching Applications power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic •PDP TV lamp ballasts. • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D G G G D TO-220 D TO-220F S S S Absolute Maximum Ratings Symbol Parameter FDP51N25 FDPF51N25 Unit V Drain-Source Voltage 250 V DSS I Drain Current - Continuous (T = 25C) 51 51* A D C - Continuous (T = 100C) 30 30* A C (Note 1) I Drain Current - Pulsed A DM 204 204* V Gate-Source voltage  30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1111 mJ AS (Note 1) I Avalanche Current 51 A AR (Note 1) E Repetitive Avalanche Energy 32 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 320 38 W D C - Derate above 25C 3.7 0.3 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP51N25 FDPF51N25 Unit R Thermal Resistance, Junction-to-Case, Max. 0.39 3.3 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.5 -- C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA ©2008 1 FDP51N25/ FDPF51N25 Rev. C0
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