FDP39N20 ,Discrete MOSFETApplications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.•PDP TV• Lig ..
FDP4020P ,P-Channel 2.5V Specified Enhancement Mode Field Effect Transistorapplications.• 175°C maximum junction temperature rating.SGDT = 25°C unless otherwise notedAbsolut ..
FDP4030L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
FDP46N30 ,300V N-Channel MOSFETFeatures Description• 46A, 300V, R = 0.079Ω @V = 10 V These N-Channel enhancement mode power field ..
FDP51N25 ,N-Channel UniFETTM MOSFET 250V, 51A, 60m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 60 m (Max.) ..
FDP51N25 ,N-Channel UniFETTM MOSFET 250V, 51A, 60m?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FQA18N50V2 ,500V N-Channel MOSFETFQA18N50V2TMQFETFQA18N50V2500V N-Channel MOSFET
FQA19N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 21.8A, 200V, R = 0.17Ω @V = 10 VDS(on ..
FQA19N20L ,200V LOGIC N-Channel MOSFET
FQA19N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 18.5A, 600V, R = 0.38 Ω @ V = 10 VDS( ..
FQA22N30 ,300V N-Channel MOSFET
FQA22P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDP39N20
Discrete MOSFET
TM FDP39N20/ FPDF39N20 N-Channel UniFET MOSFET March 2013 FDP39N20 / FDPF39N20 TM N-Channel UniFET MOSFET 200 V, 39 A, 66 m Features Description TM ® •R = 66 m (Max.) @ V = 10 V, I = 19.5 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ.38 nC) This MOSFET is tailored to reduce on-state resistance, and to •Low C (Typ. 57 pF) rss provide better switching performance and higher avalanche energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction Applications (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. •PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D G G G D TO-220 D TO-220F S S S Absolute Maximum Ratings Symbol Parameter FDP39N20 FDPF39N20 Unit V Drain-Source Voltage 200 V DSS I Drain Current - Continuous (T = 25C) 39 39 * A D C - Continuous (T = 100C) 23.4 23.4 * A C (Note 1) I Drain Current - Pulsed 156 156 * A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 860 mJ AS I Avalanche Current (Note 1) 39 A AR E Repetitive Avalanche Energy (Note 1) 25.1 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 251 37 W D C - Derate above 25C 2.0 0.29 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP39N20 FDPF39N20 Unit R Thermal Resistance, Junction-to-Case, Max. 0.5 3.4 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.5 - C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA ©2007 1 FDP39N20/ FDPF39N20 Rev. C0
