FDP24N40 ,N-Channel UniFETTM MOSFET 400V, 24A, 175m?Applications• Uninterruptible Power Supply• AC-DC Power SupplyDGGDTO-220SSoMOSFET Maximum Ratings ..
FDP2532 ,N-Channel PowerTrench ?MOSFET 150V, 79A, 16mOhmFDB2532 / FDP2532 / FDI2532August 2002FDB2532 / FDP2532 / FDI2532®N-Channel PowerTrench MOSFET150V, ..
FDP2532. ,N-Channel PowerTrench ?MOSFET 150V, 79A, 16mOhmFDB2532 / FDP2532 / FDI2532August 2002FDB2532 / FDP2532 / FDI2532®N-Channel PowerTrench MOSFET150V, ..
FDP2552 ,N-Channel PowerTrench ?MOSFET 150V, 37A, 36mOhmFDB2552 / FDP2552June 2002FDB2552 / FDP2552®N-Channel PowerTrench MOSFET150V, 37A, 36mΩ
FDP2570 ,150V N-Channel PowerTrench MOSFETFDP2570/FDB2570August 2001FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET
FDP2570 ,150V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 22 A, 150 V. R = 80 mΩ @ V = 10 VDS(ON) GSspecific ..
FQA10N80C ,800V N-Channel Advance Q-FET C-SeriesFQA10N80CTMQFETFQA10N80C800V N-Channel MOSFET
FQA11N40 ,400V N-Channel MOSFET
FQA11N90 ,900V N-Channel MOSFETSeptember 2000TMQFET QFET QFET QFETFQA11N90900V N-Channel MOSFET
FQA11N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 11.4A, 900V, R = 0.96 Ω @ V = 10 VDS( ..
FQA11N90C ,900V N-Channel Advanced QFET C-SeriesFQA11N90CFQA11N90C900V N-Channel MOSFET
FQA11N90C_F109 ,N-Channel QFET?MOSFET 900V, 11.0A, 1.1?Features• 11 A, 900 V, R = 1.1 Ω (Max.) @ V = 10 V, This N-Channel enhancement mode power MOSFET is ..
FDP24N40
N-Channel UniFETTM MOSFET 400V, 24A, 175m?
TM FDP24N40 N-Channel UniFET MOSFET March 2013 FDP24N40 TM N-Channel UniFET MOSFET 400 V, 24 A, 175 m Features Description TM ® •R = 140 m (Typ.) @ V = 10 V, I = 12 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 46 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low C (Typ. 25 pF) rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic • RoHS Compliant lamp ballasts. Applications • Uninterruptible Power Supply • AC-DC Power Supply D G G D TO-220 S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDP24N40 Unit V Drain to Source Voltage 400 V DSS V Gate to Source Voltage ±30 V GSS o - Continuous (T = 25 C) 24 C I Drain Current A D o - Continuous (T = 100 C) 14.4 C I Drain Current - Pulsed (Note 1) 96 A DM E Single Pulsed Avalanche Energy (Note 2) 1296 mJ AS I Avalanche Current (Note 1) 24 A AR E Repetitive Avalanche Energy (Note 1) 22.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 227 W C P Power Dissipation D o o - Derate above 25C1.8W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP24N40 Unit R Thermal Resistance, Junction to Case, Max. 0.55 JC o R Thermal Resistance, Case to Sink, Typ. 0.5 C/W CS R Thermal Resistance, Junction to Ambient, Max. 62.5 JA ©2012 1 FDP24N40 Rev. C0
