FDP025N06 ,N-Channel PowerTrench?MOSFET 60V, 265A, 2.5m?Features Description•R = 1.9 mΩ ( Typ.)@ V = 10 V, I = 75 A This N-Channel MOSFET is produced using ..
FDP030N06 ,N-Channel PowerTrench?MOSFET 60V, 193A, 3.2m?ApplicationsRDS(on) • Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curr ..
FDP038AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 80A, 3.8mOhmApplications•r = 3.5mΩ (Typ.), V = 10V, I = 80A Motor / Body Load ControlDS(ON) GS DQ (tot) = 95 ..
FDP047AN08A0 ,N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.7mOhmFDP047AN08A0April 2002FDP047AN08A0®N-Channel UltraFET Trench MOSFET75V, 80A, 4.7mΩ
FDP047N08 ,N-Channel PowerTrench?MOSFET 75V, 164A, 4.7m?Applications• High Power and Current Handling Capability• Synchronous Rectification for ATX / Serve ..
FDP047N08 ,N-Channel PowerTrench?MOSFET 75V, 164A, 4.7m?Features Description•R = 3.8 mΩ ( Typ.)@ V = 10 V, I = 80 A This N-Channel MOSFET is produced using ..
FPX0368S , STANDARD CRYSTALS
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQA10N80800V N-Channel MOSFET
FQA10N80C ,800V N-Channel Advance Q-FET C-SeriesFQA10N80CTMQFETFQA10N80C800V N-Channel MOSFET
FDP025N06
N-Channel PowerTrench?MOSFET 60V, 265A, 2.5m?
® FDP025N06 N-Channel PowerTrench MOSFET March 2013 FDP025N06 ® N-Channel PowerTrench MOSFET 60 V, 265 A, 2.5 mΩ Features Description •R = 1.9 mΩ ( Typ.)@ V = 10 V, I = 75 A This N-Channel MOSFET is produced using Fairchild Semicon- DS(on) GS D ® ® ductor ’s advanced PowerTrench process that has been tai- • Fast Switching Speed lored to minimize the on-state resistance while maintaining superior switching performance. • Low Gate Charge • High Performance Trench Technology for Extremely Low Applications R DS(on) • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability • Battery Protection Circuit • RoHS Compliant • Motor Drives and Uninterruptible Power Supplies • Renewable system D G TO-220 G D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDP025N06 Unit V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±20 V GSS o -Continuous (T = 25 C, Silicon Limited) 265* C o I Drain Current -Continuous (T = 100 C, Silicon Limited) 190* A D C o -Continuous (T = 25 C, Package Limited) 120 C I Drain Current - Pulsed (Note 1) 1060 A DM E Single Pulsed Avalanche Energy (Note 2) 2531 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 395 W C P Power Dissipation D o o - Derate above 25C2.6W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter FDP025N06 Unit R Thermal Resistance, Junction to Case, Max. 0.38 θJC o R Thermal Resistance, Case to Sink Typ. 0.5 C/W θCS R Thermal Resistance, Junction to Ambient, Max. 62.5 θJA ©2008 1 FDP025N06 Rev. C1
