FDN5618P ,60V P-Channel Logic Level PowerTrench MOSFETFeaturesThis 60V P-Channel MOSFET uses Fairchild’s high• –1.25 A, –60 V. R = 0.170 Ω @ V = –10 VDS( ..
FDN5630 ,60V N-Channel PowerTrench MOSFETfeatures very low R in a small SOT23DS(ON) Low gate charge.footprint. Fairchild’s PowerTrench t ..
FDN5630_NL ,60V N-Channel PowerTrench MOSFETApplications DC/DC converter Motor drivesD DSGSTMGSuperSOT -3Absolute Maximum Ratings T = 25 C ..
FDN5632N_F085 ,N-Channel Logic Level PowerTrench?MOSFET 60V, 1.6A, 98m?Applications R = 98mΩ at V = 4.5V, I = 1.6ADS(on) GS D DC/DC converter R = 82mΩ at V = 10V, I = ..
FDN8601 ,100V N-Channel PowerTrench?MOSFETApplicationssurface mount package Primary DC-DC Switch Fast switching speed Load Switch 100% UI ..
FDP025N06 ,N-Channel PowerTrench?MOSFET 60V, 265A, 2.5m?Features Description•R = 1.9 mΩ ( Typ.)@ V = 10 V, I = 75 A This N-Channel MOSFET is produced using ..
FPNH10 ,NPN RF TransistorFPNH10FPNH10C TO-92BENPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifie ..
FPX0368S , STANDARD CRYSTALS
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQA10N80800V N-Channel MOSFET
FDN5618P
60V P-Channel Logic Level PowerTrench MOSFET
FDN5618P October 2000 FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high • –1.25 A, –60 V. R = 0.170 Ω @ V = –10 V DS(ON) GS voltage PowerTrench process. It has been optimized for R = 0.230 Ω @ V = –4.5 V DS(ON) GS power management applications. • Fast switching speed Applications • DC-DC converters • High performance trench technology for extremely low R DS(ON) • Load switch • Power management D D S S G TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –60 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) –1.25 A D – Pulsed –10 Maximum Power Dissipation (Note 1a) 0.5 W P D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 75 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 618 FDN5618P 7’’ 8mm 3000 units 2000 FDN5618P Rev C(W)
