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FDN352APFAIRCHILDN/a9000avaiSingle P-Channel, PowerTrench


FDN352AP ,Single P-Channel, PowerTrenchGeneral Description –1.3 A, –30V R = 180 mΩ @ V = –10V This P-Channel Logic Level MOSF ..
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FDN352AP
Single P-Channel, PowerTrench
® FDN352AP Single P-Channel, PowerTrench MOSFET April 2005 FDN352AP ® Single P-Channel, PowerTrench MOSFET Features General Description ■ –1.3 A, –30V R = 180 mΩ @ V = –10V This P-Channel Logic Level MOSFET is produced using Fair- DS(ON) GS –1.1 A, –30V R = 300 mΩ @ V = –4.5V child Semiconductor advanced Power Trench process that has DS(ON) GS been especially tailored to minimize the on-state resistance and ■ High performance trench technology for extremely low yet maintain low gate charge for superior switching perfor- R . DS(ON) mance. ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling These devices are well suited for low voltage and battery pow- capability. ered applications where low in-line power loss is needed in a very small outline surface mount package. Applications ■ Notebook computer power management D D S G S G G SuperSOT™-3 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage ±25 V GSS I Drain Current – Continuous (Note 1a) –1.3 A D – Pulsed –10 P Power Dissipation for Single Operation (Note 1a) 0.5 W D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 75 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 52AP FDN352AP 7’’ 8mm 3000 units ©2005 1 FDN352AP Rev. C
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