FDN339AN ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 3 A, 20 V. R = 0.035 Ω @ V = 4.5 VDS(ON) ..
FDN340 ,Single P-Channel/ Logic Level/ PowerTrench MOSFETapplications: Load switching and power management,• High performance trench technology for extremel ..
FDN340P ,Single P-Channel, Logic Level, PowerTrench MOSFETFeatures This P-Channel Logic Level MOSFET is produced • –2A, 20 V R = 70 mΩ @ V = –4.5 V DS(ON) GS ..
FDN342P ,P-Channel 2.5V Specified PowerTrench TM MOSFET * + ..
FDN352AP ,Single P-Channel, PowerTrenchGeneral Description –1.3 A, –30V R = 180 mΩ @ V = –10V This P-Channel Logic Level MOSF ..
FDN357N ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description
FPF2003 ,Full Function Load SwitchesBlock DiagramVINUVLOONCONTROLLOGICCURRENTLIMITVOUTTHERMALFLAGBSHUTDOWNGND2004 Fairchild Semiconduct ..
FPF2004 ,Full Function Load SwitchesBlock DiagramVINUVLOONCONTROLLOGICCURRENTLIMITVOUTTHERMALFLAGBSHUTDOWNGND2004 Fairchild Semiconduct ..
FPF2005 ,Full Function Load SwitchesGeneral Description 1.8 to 5.5V Input Voltage Range The FPF2000 through FPF2007 is a family of loa ..
FPF2006 ,Full Function Load SwitchesApplications(FLAGB) low. The FPF2000, FPF2001, FPF2004 and FPF2005,have an auto-restart feature whi ..
FPF2006 ,Full Function Load SwitchesApplications(FLAGB) low. The FPF2000, FPF2001, FPF2004 and FPF2005,have an auto-restart feature whi ..
FPF2007 ,Full Function Load SwitchesFPF2000-FPF2007 IntelliMAX™ Advanced Load Management Products ..
FDN339AN
N-Channel 2.5V Specified PowerTrench MOSFET
FDN339AN FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced . R3 A, 20 V = 0.035 Ω @ V = 4.5 V GS RΩ @ V. = 2.5 V GS Low gate charge (7nC typical). ApplicationsHigh performance trench technology for extremely low R. High power and current handling capability. D D S GS TM G SuperSOT -3 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 8 V GSS ± I Drain Current - Continuous (Note 1a) 3A D - Pulsed 20 P Power Dissipation for Single Operation 0.5 W (Note 1a) D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J stg Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 C/W θ ° JA R Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W θJC Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity 339 FDN339AN 7 8mm 3000 units 1999 FDN339AN Rev. C ’’ Load switch DC/DC converter• DS(ON) superior switching performance. on-state resistance and yet maintain low gate charge for DS(ON) process that has been especially tailored to minimize the = 0.050 using Fairchild Semiconductor's advanced PowerTrench DS(ON) November 1999
