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FDN327NFAIN/a8940avaiN-Channel 1.8 Vgs Specified PowerTrench MOSFET


FDN327N ,N-Channel 1.8 Vgs Specified PowerTrench MOSFETGeneral Description MOSFETPowerTrenchN-Channel 1.8 October 2001FDN327N
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FDN327N
N-Channel 1.8 Vgs Specified PowerTrench MOSFET
FDN327N FDN327N Ò Ò Vgs Specified This 20V N-Channel MOSFET uses Fairchild’s high · 2 A, 20 V. R = 70 m W @ V = 4.5 V voltage PowerTrench process. It has been optimized for R = 80 m W @ V = 2.5 V power management applications. R = 120 m W = 1.8 V · Low gate charge (4.5 nC typical) · Load switch · Fast switching speed · Battery protection · Power management · High performance trench technology for extremely DD S GS G o T=25C unless otherwise notedA RatingsUnits VDrain-Source VoltageV VGate-Source VoltageV± IDrain Current– Continuous2AD – Pulsed8 PPower Dissipation for Single Operation0.5WD T, TOperating and Storage Junction Temperature Range–55 to +150 °CJ Thermal Characteristics Thermal Resistance, Junction-to-Ambient Rq °C/W RThermal Resistance, Junction-to-Case °C/W qJC Device MarkingReel SizeTape widthQuantity FDN327N3000 units Ó FDN327N Rev C (W)2001 8mm7’’327 Device Package Marking and Ordering Information 75(Note 1) JA 250(Note 1a) STG 0.46 (Note 1b) (Note 1a) (Note 1a) 8GSS DSS 20 ParameterSymbol Absolute Maximum Ratings SuperSOT -3 TM DS(ON)low R Applications GSDS(ON) @ V GSDS(ON) GSDS(ON) FeaturesGeneral Description MOSFETPowerTrenchN-Channel 1.8 October 2001
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