FDMS8660S ,N-Channel PowerTrench® SyncFETTM 30V, 40A, 2.4mOhmsGeneral DescriptionThe FDMS8660S has been designed to minimize losses in Max r = 2.4mΩ at V = 10V ..
FDMS8670 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 2.6m: at V = 10V, I = 24A This N-Channel MOSFET is produced using Fair ..
FDMS8670AS ,FDMS8670AS N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.0mOhmsGeneral Description Max r = 3.0m: at V = 10V, I = 23A The FDMS8670AS has been designed to minimize ..
FDMS8670S General DescriptionThe FDMS8670S has been designed to minimize losses in Max r = 3.5m: at V = 10V ..
FDMS8672AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters RoHS Complian ..
FDMS8672S General DescriptionThe FDMS8672S has been designed to minimize losses in Max r = 5.0m: at V = 10V ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS8660S
N-Channel PowerTrench® SyncFETTM 30V, 40A, 2.4mOhms
® TM FDMS8660S N-Channel PowerTrench SyncFET June 2008 FDMS8660S tm ® TM N-Channel PowerTrench SyncFET 30V, 40A, 2.4mΩ Features General Description The FDMS8660S has been designed to minimize losses in Max r = 2.4mΩ at V = 10V, I = 25A DS(on) GS D power conversion applications. Advancements in both silicon Max r = 3.5mΩ at V = 4.5V, I = 21A DS(on) GS D and package technologies have been combined to offer the lowest r while maintaining excellent switching Advanced Package and Silicon combination for low r DS(on) DS(on) performance. This device has the added benefit of an efficient and high efficiency monolithic Schottky body diode. SyncFET Schottky Body Diode Application MSL1 robust package design RoHS Compliant Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 D G S 5 4 S S G D 6 3 S D 7 2 S D D D S D 8 1 D Power 56 (Bottom view) MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 40 C -Continuous (Silicon limited) T = 25°C 147 C I A D -Continuous T = 25°C (Note 1a) 25 A -Pulsed 200 E Single Pulse Avalanche Energy (Note 3) 937 mJ AS Power Dissipation T = 25°C 83 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.5 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8660S FDMS8660S Power 56 13’’ 12mm 3000 units 1 ©2008 FDMS8660S Rev C3
