FDMS86101 ,100V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 8 mΩ at V = 10 V ..
FDMS86101 ,100V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 8 mΩ at V = 10 V ..
FDMS86200 ,150V N-Channel Power Trench?MOSFETGeneral Description Max r = 18 mΩ at V = 10 V, I = 9.6 A This N-Channel MOSFET is produced us ..
FDMS86300 ,80V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design OringFET / Load Switching 100% UIL tested DC-DC Convers ..
FDMS86322 ,80V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 7.65 m at V = 1 ..
FDMS86322 ,80V N-Channel PowerTrench?MOSFET®FDMS86322 N-Channel PowerTrench MOSFETOctober 2010FDMS86322®N-Channel PowerTrench MOSFET80 V, 60 ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS86101
100V N-Channel PowerTrench?MOSFET
® FDMS86101 N-Channel PowerTrench MOSFET January 2013 FDMS86101 ® N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Max r = 8 mΩ at V = 10 V, I = 13 A DS(on) GS D ® Semiconductor‘s advanced Power Trench process thant has Max r = 13.5 mΩ at V = 6 V, I = 9.5 A DS(on) GS D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Advanced Package and Silicon combination for low r DS(on) and high efficiency MSL1 robust package design Application 100% UIL tested DC-DC Conversion 100% Rg tested RoHS Compliant Top Bottom Pin 1 S S D S S G D S D S D D D G D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25 °C 60 C I -Continuous T = 25 °C (Note 1a) 12.4 A D A -Pulsed 200 E Single Pulse Avalanche Energy (Note 3) 173 mJ AS Power Dissipation T = 25 °C 104 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.2 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86101 FDMS86101 Power 56 13 ’’ 12 mm 3000 units ©2013 1 FDMS86101 Rev.C9
