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FDMS7692FAI Pb-freeN/a551avai30V N-Channel PowerTrench?MOSFET


FDMS7692 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to „ Max r = 7.5 mΩ at V = ..
FDMS7692A ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to „ Max r = 8 mΩ at V = 1 ..
FDMS7694 ,30V N-Channel PowerTrench?MOSFETApplications„ MSL1 robust package design„ IMVP Vcore Switching for Notebook„ 100% UIL tested„ VRM V ..
FDMS7694 ,30V N-Channel PowerTrench?MOSFETApplications„ MSL1 robust package design„ IMVP Vcore Switching for Notebook„ 100% UIL tested„ VRM V ..
FDMS7694 ,30V N-Channel PowerTrench?MOSFETGeneral Description„ Max r = 9.5 mΩ at V = 10 V, I = 13.2 AThis N-Channel MOSFET has been design ..
FDMS7694 ,30V N-Channel PowerTrench?MOSFET®FDMS7694 N-Channel PowerTrench MOSFETJuly 2011FDMS7694 ..
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FDMS7692
30V N-Channel PowerTrench?MOSFET
® FDMS7692 N-Channel PowerTrench MOSFET August 2011 FDMS7692 ® N-Channel PowerTrench MOSFET 30 V, 7.5 mΩ Features General Description This N-Channel MOSFET has been designed specifically to „ Max r = 7.5 mΩ at V = 10 V, I = 13 A DS(on) GS D improve the overall efficiency and to minimize switch node „ Max r = 13 mΩ at V = 4.5 V, I = 10 A DS(on) GS D ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized „ Advanced Package and Silicon combination for low r DS(on) for low gate charge, low r fast switching speed and body DS(on), and high efficiency diode reverse recovery performance. „ Next generation enhanced body diode technology, engineered for soft recovery. Applications „ MSL1 robust package design „ IMVP Vcore Switching for Notebook „ 100% UIL tested „ VRM Vcore Switching for Desktop and Server „ RoHS Compliant „ OringFET / Load Switch „ DC-DC Conversion Top Bottom Pin 1 S G D 5 4 S S G S D 6 3 D 7 S 2 D D 1 S D 8 D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 28 C -Continuous (Silicon limited) T = 25 °C 47 C I A D -Continuous T = 25 °C (Note 1a) 14 A -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 21 mJ AS Power Dissipation T = 25 °C 27 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.6 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7692 FDMS7692 Power 56 13 ’’ 12 mm 3000 units ©2011 1 FDMS7692 Rev.D1
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