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FDMS7670ASVISHAYN/a8659avai


FDMS7670AS Applications„ MSL1 robust package design„ 100% UIL tested„ Synchronous Rectifier for DC/DC Converte ..
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FDMS7670AS

® TM FDMS7670AS N-Channel PowerTrench SyncFET March 2010 FDMS7670AS ® TM N-Channel PowerTrench SyncFET 30 V, 42 A, 3 m: Features General Description The FDMS7670AS has been designed to minimize losses in „ Max r = 3.0 m: at V = 10 V, I = 21 A DS(on) GS D power conversion application. Advancements in both silicon and „ Max r = 3.2 m: at V = 7 V, I = 19 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This „ Advanced Package and Silicon combination for low r DS(on) DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. „ SyncFET Schottky Body Diode Applications „ MSL1 robust package design „ 100% UIL tested „ Synchronous Rectifier for DC/DC Converters „ RoHS Compliant „ Notebook Vcore/ GPU low side switch „ Networking Point of Load low side switch „ Telecom secondary side rectification Bottom Top Pin 1 D G S 5 4 S S D G S 6 3 D S 7 2 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 42 C -Continuous (Silicon limited) T = 25 °C 113 C I A D -Continuous T = 25 °C (Note 1a) 22 A -Pulsed 150 dv/dt MOSFET dv/dt 1.8 V/ns E Single Pulse Avalanche Energy (Note 3) 98 mJ AS Power Dissipation T = 25 °C 65 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.9 TJC °C/W R Thermal Resistance, Junction to Ambient  (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7670AS FDMS7670AS Power 56 13 ’’ 12 mm 3000 units 1 ©2010 FDMS7670AS Rev.C1
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