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FDMS6681Z
-30V P-Channel PowerTrench?MOSFET
® FDMS6681Z P-Channel PowerTrench MOSFET May 2009 FDMS6681Z ® P-Channel PowerTrench MOSFET -30 V, -49 A, 3.2 m: Features General Description Max r = 3.2 m: at V = -10 V, I = -21.1 A The FDMS6681Z has been designed to minimize losses in load DS(on) GS D switch applications. Advancements in both silicon and package Max r = 5.0 m: at V = -4.5 V, I = -15.7 A DS(on) GS D technologies have been combined to offer the lowest r and DS(on) Advanced Package and Silicon combination ESD protection. for low r DS(on) Applications HBM ESD protection level of 8kV typical(note 3) Load Switch in Notebook and Server MSL1 robust package design Notebook Battery Pack Power Management RoHS Compliant Top Bottom Pin 1 S 5 4 G D S S G D 6 3 S D 7 2 S D D D D 8 1 S D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous (Package limited) T = 25 °C -49 C -Continuous (Silicon limited) T = 25 °C -116 C I A D -Continuous T = 25 °C (Note 1a) -21.1 A -Pulsed -90 Power Dissipation T = 25 °C 73 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.7 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS6681Z FDMS6681Z Power 56 13 ’’ 12 mm 3000 units ©2009 1 FDMS6681Z Rev.C4
