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FDMS3604SFAIRCHILDN/a3000avaiPowerTrench?Power Stage


FDMS3604S ,PowerTrench?Power StageElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
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FDMS3604S
PowerTrench?Power Stage
® FDMS3604S Dual N-Channel PowerTrench MOSFET Preliminary Datasheet September 2010 FDMS3604S ® Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 6.8 mΩ N-Channel: 30 V, 40 A, 2.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally „ Max r = 6.8 mΩ at V = 10 V, I = 13 A DS(on) GS D connected to enable easy placement and routing of synchronous „ Max r = 9.8 mΩ at V = 4.5 V, I = 11 A DS(on) GS D buck converters. The control MOSFET (Q1) and synchronous Q2: N-Channel SyncFET (Q2) have been designed to provide optimal power „ Max r = 2.6 mΩ at V = 10 V, I = 23 A DS(on) GS D efficiency. „ Max r = 3.5 mΩ at V = 4.5 V, I = 21 A DS(on) GS D Applications „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ Computing „ MOSFET integration enables optimum layout for lower circuit „ Communications inductance and reduced switch node ringing „ General Purpose Point of Load „ RoHS Compliant „ Notebook VCORE G1 D1 D1 D1 Q 2 S2 D1 D1 5 4 PHASE PHASE D1 S2 6 3 (S1/D2) S2 D1 7 2 G2 S2 G2 S2 G1 8 1 S2 Q 1 Top Bottom Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage (Note 3) ±20 ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 30 40 C -Continuous (Silicon limited) T = 25 °C 60 130 C I A D 1a 1b -Continuous T = 25 °C 13 23 A -Pulsed 40 100 4 5 E Single Pulse Avalanche Energy 40 112 mJ AS 1a 1b Power Dissipation for Single Operation T = 25 °C 2.2 2.5 A P W D 1c 1d Power Dissipation for Single Operation T = 25 °C 1.0 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 57 50 θJA 1c 1d R Thermal Resistance, Junction to Ambient 125 120 °C/W θJA R Thermal Resistance, Junction to Case 3.5 2 θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 22CA FDMS3604S Power 56 13 ” 12 mm 3000 units N7CC 1 ©2010 FDMS3604S Rev.B4
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