FDMS3500 ,75V N-Channel PowerTrench?MOSFETGeneral Description Max r = 14.5m: at V = 10V, I = 11.5A This N-Channel MOSFET is produced usi ..
FDMS3572 ,80V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 16.5mΩ at V = 10V, I = 8.8AUItraFET devices combine characteristics th ..
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FDMS3604AS ,30V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
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FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
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FDMS3500
75V N-Channel PowerTrench?MOSFET
® FDMS3500 N-Channel Power Trench MOSFET May 2009 FDMS3500 tm ® N-Channel Power Trench MOSFET 75V, 49A, 14.5m: Features General Description Max r = 14.5m: at V = 10V, I = 11.5A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor‘s advanced Power Trench process that has Max r = 16.3m: at V = 4.5V, I = 10A DS(on) GS D been especially tailored to minimize the on-state resistance and Advanced Package and Silicon combination for low r yet maintain superior switching performance. DS(on) MSL1 robust package design 100% UIL Tested Application RoHS Compliant DC - DC Conversion Top Bottom Pin 1 S G 5 4 D S S G D 6 3 S D 7 2 S D D 8 1 D S D D Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 75 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 49 C -Continuous (Silicon limited) T = 25°C 57 C I A D -Continuous T = 25°C (Note 1a) 9.2 A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 384 mJ AS Power Dissipation T = 25°C 96 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.3 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS3500 FDMS3500 Power 56 13’’ 12mm 3000 units 1 ©2009 FDMS3500 Rev.C1
