FDMC8884 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 19 mΩ at V = 10 V, I = 9.0 A This N-Channel MOSFET is produced usin ..
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FDMC8884
30V N-Channel Power Trench?MOSFET
® FDMC8884 N-Channel Power Trench MOSFET April 2012 FDMC8884 ® N-Channel Power Trench MOSFET 30 V, 15 A, 19 mΩ Features General Description Max r = 19 mΩ at V = 10 V, I = 9.0 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor’s advanced Power Trench process that has Max r = 30 mΩ at V = 4.5 V, I = 7.2 A DS(on) GS D been especially tailored to minimize the on-state resistance. This High performance technology for extremely low r device is well suited for Power Management and load switching DS(on) applications common in Notebook Computers and Portable Termination is Lead-free and RoHS Compliant Battery Packs. Application High side in DC - DC Buck Converters Notebook battery power management Load switch in Notebook Bottom Top Pin 1 G D 5 4 G S S S D 6 3 S D 7 S 2 D D D S D 8 1 D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 15 C -Continuous (Silicon limited) T = 25 °C 24 C I A D -Continuous T = 25 °C (Note 1a) 9.0 A -Pulsed 40 E Single Pulse Avalanche Energy (Note 3) 24 mJ AS Power Dissipation T = 25 °C 18 C P W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 6.6 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8884 FDMC8884 MLP 3.3x3.3 13 ’’ 12 mm 3000 units 1 ©2012 FDMC8884 Rev.E3
