FDMC8588 ,25V N-Channel PowerTrench?MOSFETApplications RoHS Compliant High side switching for high end computing High power density DC-DC ..
FDMC86102 ,100V N-Channel Shielded Gate Power Trench?MOSFETGeneral Description Max r = 24 mΩ at V = 10 V, I = 7 A This N-Channel MOSFET is produced using ..
FDMC8651 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 6.1 mΩ at V = 4.5 V, I = 15 A This device has been designed specifical ..
FDMC8651 ,30V N-Channel Power Trench?MOSFETApplications Synchronous rectifier 3.3 V input synchronous buck switchBottomTopPin 1S 4 GD 5SSGD ..
FDMC8676 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 5.9mΩ at V = 10V, I = 14.7A This device has been designed specifically ..
FDMC8676 ,30V N-Channel PowerTrench?MOSFETApplications High efficiency DC-DC converter Notebook DC-DC conversion Multi purpose point of lo ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC8588
25V N-Channel PowerTrench?MOSFET
® FDMC8588 N-Channel PowerTrench MOSFET June 2012 FDMC8588 ® N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 mΩ Features General Description Max r = 5.7 mΩ at V = 4.5 V, I = 16.5 A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency and to minimize switch node State-of-the-art switching performance ringing of DC/DC converters using either synchronous or Lower output capacitance, gate resistance, and gate charge conventional switching PWM controllers. It has been optimized boost efficiency for low gate charge, low r , fast switching speed and body DS(on) diode reverse recovery performance. Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction Applications RoHS Compliant High side switching for high end computing High power density DC-DC synchronous buck converter Bottom Top Pin 1 S S D S S S G D S D D D D G D D Power 33 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage (Note 5) 25 V DS V Gate to Source Voltage (Note 4) ±12 V GS Drain Current - Continuous (Package limited) T = 25 °C 40 C - Continuous (Silicon Limited) T = 25 °C 59 C I A D - Continuous (Note 1a) 16.5 - Pulsed 60 E Single Pulse Avalanche Energy (Note 3) 29 mJ AS Power Dissipation T = 25 °C 26 C P W D Power Dissipation T = 25 °C (Note 1a) 2.4 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case T = 25 °C 4.7 θJC C °C/W R Thermal Resistance, Junction to Ambient T = 25 °C (Note 1a) 53 θJA A Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity Power 33 08OD FDMC8588 13 ’’ 12 mm 3000 units ©2012 1 FDMC8588 Rev.D3
