FDMC8200 ,30V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMC8296 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 8.0m at V = 10V, I = 12A This N-Channel MOSFET is produced using ..
FDMC8462 ,40V N-Channel Power Trench?MOSFETGeneral Description Max r = 5.8mΩ at V = 10V, I = 13.5A This N-Channel MOSFET is produced usin ..
FDMC8462 ,40V N-Channel Power Trench?MOSFET®FDMC8462 N-Channel Power Trench MOSFETMarch 2008FDMC8462 ..
FDMC8588 ,25V N-Channel PowerTrench?MOSFETApplications RoHS Compliant High side switching for high end computing High power density DC-DC ..
FDMC86102 ,100V N-Channel Shielded Gate Power Trench?MOSFETGeneral Description Max r = 24 mΩ at V = 10 V, I = 7 A This N-Channel MOSFET is produced using ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC8200
30V Dual N-Channel PowerTrench?MOSFET
® FDMC8200 Dual N-Channel PowerTrench MOSFET June 2009 FDMC8200 ® Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max r = 20 mΩ at V = 10 V, I = 6 A DS(on) GS D has been internally connected to enable easy placement and Max r = 32 mΩ at V = 4.5 V, I = 5 A DS(on) GS D routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been Q2: N-Channel designed to provide optimal power efficiency. Max r = 9.5 mΩ at V = 10 V, I = 9 A DS(on) GS D Max r = 13.5 mΩ at V = 4.5 V, I = 7 A DS(on) GS D Applications RoHS Compliant Mobile Computing Mobile Internet Devices General Purpose Point of Load D1 D1 Q2 Q2 D1 S2 D1 5 5 4 4 Pin 1 G1 D1 D1 S2 6 6 3 3 D2/S1 S2 D1 7 7 2 2 S2 G1 G2 S2 8 8 1 1 Q1 Q1 S2 G2 BOTTOM BOTTOM Power 33 MOSFET Maximum Ratings T = 25 °C unless otherwise noted C Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage (Note 3) ±20 ±20 V GS Drain Current - Continuous (Package limited) T = 25 °C 18 18 C - Continuous (Silicon limited) T = 25 °C 23 45 C I A D 1a 1b - Continuous T = 25 °C 8 12 A - Pulsed 40 40 1a 1b Power Dissipation T = 25 °C 1.9 2.2 A P W D 1c 1d Power Dissipation T = 25 °C 0.7 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 65 55 θJA 1c 1d R Thermal Resistance, Junction to Ambient 180 145 °C/W θJA R Thermal Resistance, Junction to Case 7.5 4 θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8200 FDMC8200 Power 33 13 ” 12 mm 3000 units ©2009 1 FDMC8200 Rev.A1 V V V V G G IIN N V V H HS S IIN N IIN N V V I IN N G GN ND D G GN ND D G G G GN ND D L LS S S SW WI IT TC CH H N NO OD DE E
