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FDMC7664FSCN/a150avai30V N-Channel PowerTrench?MOSFET
FDMC7664FAIRCHILDN/a3000avai30V N-Channel PowerTrench?MOSFET
FDMC7664FairchilN/a5800avai30V N-Channel PowerTrench?MOSFET


FDMC7664 ,30V N-Channel PowerTrench?MOSFETapplications common in Notebook Computers and Portable „ Termination is Lead-free and RoHS Complian ..
FDMC7664 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild „ Max r = 4.2 m: at V = 10 V ..
FDMC7664 ,30V N-Channel PowerTrench?MOSFETApplications„ DC - DC Buck Converters„ Notebook battery power management„ Load switch in NotebookTo ..
FDMC7672 ,30V N-Channel Power Trench?MOSFETapplications common in Notebook Computers and Portable „ Termination is Lead-free and RoHS Complian ..
FDMC7672S General DescriptionThis FDMC7672S is produced using Fairchild Semiconductor’s „ Max r = 6.0 m: at V ..
FDMC7672S Applications„ DC - DC Buck Converters„ Notebook battery power mangement„ Load switch in NotebookBot ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..


FDMC7664
30V N-Channel PowerTrench?MOSFET
® FDMC7664 N-Channel PowerTrench MOSFET June 2010 FDMC7664 ® N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 m: Features General Description This N-Channel MOSFET is produced using Fairchild „ Max r = 4.2 m: at V = 10 V, I = 18.8 A DS(on) GS D ® Semiconductor’s advanced Power Trench process that has „ Max r = 5.5 m: at V = 4.5 V, I = 16.1 A DS(on) GS D been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching „ High performance technology for extremely low r DS(on) applications common in Notebook Computers and Portable „ Termination is Lead-free and RoHS Compliant Battery Packs. Applications „ DC - DC Buck Converters „ Notebook battery power management „ Load switch in Notebook Top Bottom D 5 4 G Pin 1 G S D 6 3 S S S S D 7 2 D D D 8 1 S D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 24 C I -Continuous T = 25 °C (Note 1a) 18.8 A D A -Pulsed 60 E Single Pulse Avalanche Energy (Note 3) 188 mJ AS Power Dissipation T = 25 °C 42 C P W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.0 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7664 FDMC7664 MLP 3.3x3.3 13 ’’ 12 mm 3000 units ©2010 1 FDMC7664 Rev.C2
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