FDMC7660S Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/GPU low side switch Netwo ..
FDMC7664 ,30V N-Channel PowerTrench?MOSFETapplications common in Notebook Computers and Portable Termination is Lead-free and RoHS Complian ..
FDMC7664 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 4.2 m: at V = 10 V ..
FDMC7664 ,30V N-Channel PowerTrench?MOSFETApplications DC - DC Buck Converters Notebook battery power management Load switch in NotebookTo ..
FDMC7672 ,30V N-Channel Power Trench?MOSFETapplications common in Notebook Computers and Portable Termination is Lead-free and RoHS Complian ..
FDMC7672S General DescriptionThis FDMC7672S is produced using Fairchild Semiconductor’s Max r = 6.0 m: at V ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC7660S
® ™ FDMC7660S N-Channel Power Trench SyncFET December 2009 FDMC7660S ® ™ N-Channel Power Trench SyncFET 30 V, 20 A, 2.2 mΩ Features General Description Max r = 2.2 mΩ at V = 10 V, I = 20 A The FDMC7660S has been designed to minimize losses in DS(on) GS D power conversion applications. Advancements in both silicon Max r = 2.95 mΩ at V = 4.5 V, I = 18 A DS(on) GS D and package technologies have been combined to offer the High performance technology for extremely low r lowest r while maintaining excellent switching DS(on) DS(on) performance. This device has the added benefit of an efficient Termination is Lead-free and RoHS Compliant monolithic Schottky body diode. Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S S D G 5 4 S G D S 6 3 S D 7 2 D D D D 8 1 S D Top Bottom Power 33 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 40 C -Continuous (Silicon limited) T = 25 °C 100 C I A D -Continuous T = 25 °C (Note 1a) 20 A -Pulsed 200 E Single Pulse Avalanche Energy (Note 3) 128 mJ AS Power Dissipation 41 P W D Power Dissipation (Note 1a) 2.3 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7660S FDMC7660S Power 33 13 ’’ 12 mm 3000 units 1 ©2009 FDMC7660S Rev.C
