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FDMC6675BZ
-30V P-Channel Power Trench?MOSFET
® FDMC6675BZ P-Channel PowerTrench MOSFET September 2010 FDMC6675BZ ® P-Channel Power Trench MOSFET� -30 V, -20 A, 14.4 m� Features General Description � Max r = 14.4 m� at V = -10 V, I = -9.5 A The FDMC6675BZ has been designed to minimize losses in DS(on) GS D load switch applications. Advancements in both silicon and � Max r = 27.0 m� at V = -4.5 V, I = -6.9 A DS(on) GS D package technologies have been combined to offer the lowest � HBM ESD protection level of 8 kV typical(note 3) r and ESD protection. DS(on) � Extended V range (-25 V) for battery applications GSS Application � High performance trench technology for extremely low r DS(on) � Load Switch in Notebook and Server � High power and current handling capability � Notebook Battery Pack Power Management � Termination is Lead-free and RoHS Compliant Bottom Top Pin 1 D 5 G 4 G S S D 6 3 S S D 7 2 S D D D 8 D S 1 D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous (Package limited) T = 25 °C -20 C -Continuous (Silicon limited) T = 25 °C -40 C I A D -Continuous T = 25 °C (Note 1a) -9.5 A -Pulsed -32 Power Dissipation T = 25 °C 36 C P W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.4 �JC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 �JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC6675BZ FDMC6675BZ MLP 3.3X3.3 13 ’’ 12 mm 3000 units ©2010 1 FDMC6675BZ Rev.D3
