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FDMC2610FAIRCHILDN/a42avai200V N-Channel UltraFET Trench MOSFET


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FDMC2610
200V N-Channel UltraFET Trench MOSFET
® FDMC2610 N-Channel UltraFET Trench MOSFET November 2012 FDMC2610 ® N-Channel UltraFET Trench MOSFET 200V, 9.5A, 200mΩ Features General Description „ Max r = 200mΩ at V = 10V, I = 2.2A This N-Channel MOSFET is a rugged gate version of DS(on) GS D Fairchild Semiconductor‘s advanced Power Trench „ Max r = 215mΩ at V = 6V, I = 1.5A DS(on) GS D process. It has been optimized for power management „ Low Profile - 1mm max in a Power 33 applications. „ RoHS Compliant Application „ DC - DC Conversion Bottom Top D D D D 8 7 6 5 G D 5 4 D S 6 3 D 7 2 S D S 8 1 G S S S 1 2 3 4 Pin 1 MLP 3.3x3.3 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 200 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Silicon limited) T = 25°C 9.5 C I -Continuous T = 25°C (Note 1a) 2.2 A D A -Pulsed 15 Power Dissipation T = 25°C 42 C P W D Power Dissipation T = 25°C (Note 1a) 2.1 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 60 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC2610 FDMC2610 MLP 3.3x3.3 13 ’’ 12 mm 3000 units 1 ©2012 FDMC2610 Rev.C2
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