FDMB2307NZ ,20V Dual Common Drain N-Channel PowerTrench?MOSFETfeatures two common drain N-channel Max r = 21 mΩ at V = 3.1 V, I = 7 AS1S2(on) GS DMOSFETs, whic ..
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FDMB2307NZ
20V Dual Common Drain N-Channel PowerTrench?MOSFET
® FDMB2307NZ Dual Common Drain N-Channel PowerTrench MOSFET October 2011 FDMB2307NZ ® Dual Common Drain N-Channel PowerTrench MOSFET 20 V, 9.7 A, 16.5 mΩ Features General Description Max r = 16.5 mΩ at V = 4.5 V, I = 8 A S1S2(on) GS D This device is designed specifically as a single package solution Max r = 18 mΩ at V = 4.2 V, I = 7.4 A for Li-Ion battery pack protection circuit and other ultra-portable S1S2(on) GS D applications. It features two common drain N-channel Max r = 21 mΩ at V = 3.1 V, I = 7 A S1S2(on) GS D MOSFETs, which enables bidirectional current flow, on Max r = 24 mΩ at V = 2.5 V, I = 6.7 A ® S1S2(on) GS D Fairchild’s advanced PowerTrench process with state of the art Low Profile - 0.8 mm maximum - in the new package MicroFET Leadframe, the FDMB2307NZ minimizes both PCB MicroFET 2x3 mm space and r . S1S2(on) HBM ESD protection level > 2 kV (Note 3) Application RoHS Compliant Li-Ion Battery Pack Pin 1 S1 S1 G1 Pin 1 3 4 G1 G2 D1/D2 5 S2 2 S1 S2 6 1 S1 S2 S2 G2 Top Bottom MLP 2x3 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Source1 to Source2 Voltage 20 V S1S2 V Gate to Source Voltage (Note 4) ±12 V GS Source1 to Source2 Current -Continuous T = 25°C (Note 1a) 9.7 A I A S1S2 -Pulsed 40 Power Dissipation T = 25 °C (Note 1a) 2.2 A P W D Power Dissipation T = 25 °C (Note 1b) 0.8 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient(Dual Operation) (Note 1a) 57 θJA °C/W R Thermal Resistance, Junction to Ambient(Dual Operation) (Note 1b) 161 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 307 FDMB2307NZ MLP 2x3 7’’ 8 mm 3000 units 1 ©2011 FDMB2307NZ Rev.C5
