FDMA291P ,Single P-Channel 1.8V Specified PowerTrench?MOSFETapplications. oxidesRoHS Compliant D D GPin 1 Bottom Drain ContactSourceDrainD1 ..
FDMA291P ,Single P-Channel 1.8V Specified PowerTrench?MOSFETfeatures a MOSFET with low r = 98 m: @ V = –1.8V DS(ON) GSon-state resistance. x Low profile – ..
FDMA291P ,Single P-Channel 1.8V Specified PowerTrench?MOSFETFeaturesThis device is designed specifically for battery charge x –6.6 A, –20V. r = 42 m: @ V = –4 ..
FDMA3023PZ ,-30V Dual P-Channel PowerTrench?MOSFETapplications. HBM ESD protection level > 2 kV (Note 3) RoHS Compliant Free from halogenated com ..
FDMA420NZ ,20V Single N-Channel 2.5V Specified PowerTrench?MOSFETApplications HBM ESD protection level > 2.5kV typical (Note 3) Li-lon Battery Pack Free from ha ..
FDMA430NZ ,30V Single N-Channel 2.5V Specified PowerTrench. 甅OSFETApplications HBM ESD protection level > 2.5kV typical (Note 3) Li-lon Battery Pack Free from ha ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMA291P
Single P-Channel 1.8V Specified PowerTrench?MOSFET
FDMA291P Single P-Channel 1.8V Specified PowerTrench MOSFET April 2009 tm FDMA291P Single P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This device is designed specifically for battery charge x –6.6 A, –20V. r = 42 m: @ V = –4.5V DS(ON) GS or load switching in cellular handset and other ultra- r = 58 m: @ V = –2.5V DS(ON) GS portable applications. It features a MOSFET with low r = 98 m: @ V = –1.8V DS(ON) GS on-state resistance. x Low profile – 0.8 mm maximum – in the new package The MicroFET 2x2 package offers exceptional thermal MicroFET 2x2 mm performance for its physical size and is well suited to Free from halogenated compounds and antimony linear mode applications. oxides RoHS Compliant D D G Pin 1 Bottom Drain Contact Source Drain D 1 6 D D D 2 5 G 4 S 3 D D S MicroFET 2x2 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DS V Gate-Source Voltage V GS r8 A Drain Current – Continuous (Note 1a) –6.6 I D – Pulsed –24 W Power Dissipation for Single Operation (Note 1a) 2.4 P D (Note 1b) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 qC J STG Thermal Characteristics qC/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 52 TJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 145 TJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 291 FDMA291P 7’’ 8mm 3000 units FDMA291P Rev B4 2009
