FDMA2002NZ ,Dual N-Channel PowerTrench?MOSFETfeatures two independent N-Channel MOSFETs with x Low profile – 0.8 mm maximum – in the new package ..
FDMA2002NZ ,Dual N-Channel PowerTrench?MOSFETapplications. Free from halogenated compounds and antimony oxidesPIN 1 S1 G1 D2D1S1 1 6D1 ..
FDMA291P ,Single P-Channel 1.8V Specified PowerTrench?MOSFETFDMA291P Single P-Channel 1.8V Specified PowerTrench MOSFET April 2009tmFDMA291PSingle P-Channel ..
FDMA291P ,Single P-Channel 1.8V Specified PowerTrench?MOSFETapplications. oxidesRoHS Compliant D D GPin 1 Bottom Drain ContactSourceDrainD1 ..
FDMA291P ,Single P-Channel 1.8V Specified PowerTrench?MOSFETfeatures a MOSFET with low r = 98 m: @ V = –1.8V DS(ON) GSon-state resistance. x Low profile – ..
FDMA291P ,Single P-Channel 1.8V Specified PowerTrench?MOSFETFeaturesThis device is designed specifically for battery charge x –6.6 A, –20V. r = 42 m: @ V = –4 ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMA2002NZ
Dual N-Channel PowerTrench?MOSFET
FDMA2002NZ Dual N-Channel PowerTrench MOSFET May 200 t tm tm tm FDMA2002NZ Dual N-Channel PowerTrench MOSFET General Description Features x 2.9 A, 30 V R = 123 m: @ V = 4.5 V DS(ON) GS This device is designed specifically as a single package R = 140 m: @ V = 3.0 V DS(ON) GS solution for dual switching requirements in cellular R = 163 m: @ V = 2.5 V DS(ON) GS handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with x Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal x HBM ESD protection level = 1.8kV (Note 3) performance for its physical size and is well suited to x RoHS Compliant linear mode applications. Free from halogenated compounds and antimony oxides PIN 1 S1 G1 D2 D1 S1 1 6 D1 D2 G1 2 5 G2 3 D2 4 S2 D1 G2 S2 MicroFET 2x2 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DS V Gate-Source Voltage V GS r12 I Drain Current – Continuous (T = 25°C, V = 4.5V) 2.9 D C GS – Continuous (T = 25°C, V = 2.5V) 2.7 C GS A – Pulsed 10 P Power Dissipation for Single Operation (Note 1a) 1.5 D W Power Dissipation for Single Operation (Note 1b) 0.65 T , T Operating and Storage Temperature –55 to +150 J STG qC Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 83 (Single Operation) TJA Thermal Resistance, Junction-to-Ambient (Note 1b) 193 (Single Operation) R TJA qC/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 68 (Dual Operation) TJA R Thermal Resistance, Junction-to-Ambient (Note 1d) 145 (Dual Operation) TJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 002 FDMA2002NZ 7’’ 8mm 3000 units FDMA2002NZ Rev B (W) 20
