FDL100N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 100A, 55m?ApplicationsThis device family is suitable for switching power converter appli-• Uninterruptible Po ..
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FDL100N50F
N-Channel UniFETTM FRFET?MOSFET 500V, 100A, 55m?
TM ® FDL100N50F N-Channel UniFET FRFET MOSFET March 2013 FDL100N50F TM ® N-Channel UniFET FRFET MOSFET 500 V, 100 A, 55 m Features Description TM ® •R = 43 m (Typ.) @ V = 10 V, I = 50 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 238 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low Crss (Typ. 64pF) energy strength. The body diode’s reverse recovery performance ® • 100% Avalanche Tested of UniFET FRFET MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immu- • Improved dv/dt Capability nity is 15V/ns while normal planar MOSFETs have over 200nsec • RoHS Compliant and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. Applications This device family is suitable for switching power converter appli- • Uninterruptible Power Supply cations such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • AC-DC Power Supplypplications D G G D TO-264 S S TO-264 o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDL100N50F Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±30 V GSS o - Continuous (T = 25 C) 100 C I Drain Current A D o - Continuous (T = 100 C) 60 C I Drain Current - Pulsed (Note 1) 400 A DM E Single Pulsed Avalanche Energy (Note 2) 5000 mJ AS I Avalanche Current (Note 1) 100 A AR E Repetitive Avalanche Energy (Note 1) 73.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 2500 W C P Power Dissipation D o o - Derate above 25C20W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDL100N50F Unit R Thermal Resistance, Junction to Case, Max. 0.05 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 30 JA 1 ©2009 FDL100N50F Rev. C0
