FDJ128N ,N-Channel 2.5Vgs Specified PowerTrench MOSFETFeatures This N-Channel -2.5V specified MOSFET uses • 5.5 A, 20 V. R = 35 mΩ @ V = 4.5 V DS(ON) GSF ..
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FDJ128N
N-Channel 2.5Vgs Specified PowerTrench MOSFET
FDJ128N August 2004 FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description Features This N-Channel -2.5V specified MOSFET uses • 5.5 A, 20 V. R = 35 mΩ @ V = 4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 51 mΩ @ V = 2.5 V DS(ON) GS It has been optimized for battery power management applications. • Low gate charge Applications • High performance trench technology for extremely • Battery management low R DS(ON) • Compact industry standard SC75-6 surface mount package G S S S S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ± 12 V GSS I Drain Current – Continuous (Note 1a) 5.5 A D – Pulsed 16 P Power Dissipation for Single Operation (Note 1a) 1.6 W D T , T Operating and Storage Junction Temperature Range °C J STG –55 to +150 Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 77 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .B FDJ128N 7’’ 8mm 3000 units FDJ128N Rev B2 W) 2004
