FDJ1028N ,20V N-Channel 2.5Vgs Specified PowerTrench MOSFETFeatures This dual N-Channel 2.5V specified MOSFET uses • 3.2 A, 20 V. R = 90 mΩ @ V = 4.5 V DS(ON) ..
FDJ1028N ,20V N-Channel 2.5Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDJ1032C ,20V Complementary PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FDJ127P ,P-Channel -1.8 Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDJ128N ,N-Channel 2.5Vgs Specified PowerTrench MOSFETFeatures This N-Channel -2.5V specified MOSFET uses • 5.5 A, 20 V. R = 35 mΩ @ V = 4.5 V DS(ON) GSF ..
FDJ129 ,P-Channel -2.5 Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
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FDJ1028N
20V N-Channel 2.5Vgs Specified PowerTrench MOSFET
FDJ1028N November 2004 FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description Features This dual N-Channel 2.5V specified MOSFET uses • 3.2 A, 20 V. R = 90 mΩ @ V = 4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 130 mΩ @ V = 2.5 V DS(ON) GS Packaged in FLMP SC75, the R and thermal DS(ON) properties of the device are optimized for battery power management applications. • Low gate charge Applications • High performance trench technology for extremely • Battery management low R DS(ON) • FLMP SC75 package: Enhanced thermal performance in industry-standard package size S2 S2 Bottom Drain Contact S1 S1 Q2 G1 G1 4 3 2 5 G2 G2 S2 S2 1 6 Q1 S1 S1 Bottom Drain Contact SC75 DUAL FLMP o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage V GSS ± 12 I Drain Current – Continuous (Note 1a) 3.2 A D – Pulsed 12 P Power Dissipation for Single Operation (Note 1a) 1.5 W D T , T Operating and Storage Junction Temperature Range J STG °C –55 to +150 Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 80 R °C/W θJA R 5 θJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .F FDJ1028N 7’’ 8mm 3000 units FDJ1028N Rev B1 (W) 2004
