FDJ1027P ,-20V P-Channel 1.8V Specified PowerTrench MOSFETApplications capability • Battery management/Charger Application • High performance trench technol ..
FDJ1027P ,-20V P-Channel 1.8V Specified PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDJ1027P ,-20V P-Channel 1.8V Specified PowerTrench MOSFETFeatures This dual P-Channel 1.8V specified MOSFET uses • –2.8 A, –20 V R = 160 mΩ @ V = –4.5 V ..
FDJ1028N ,20V N-Channel 2.5Vgs Specified PowerTrench MOSFETFeatures This dual N-Channel 2.5V specified MOSFET uses • 3.2 A, 20 V. R = 90 mΩ @ V = 4.5 V DS(ON) ..
FDJ1028N ,20V N-Channel 2.5Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDJ1032C ,20V Complementary PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KT3 , IGBT-modules
FP50R12KT4 , EconoPIM2 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FDJ1027P
-20V P-Channel 1.8V Specified PowerTrench MOSFET
FDJ1027P November 2004 FDJ1027P ® P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses • –2.8 A, –20 V R = 160 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 230 mΩ @ V = –2.5 V DS(ON) GS Packaged in FLMP SC75, the R and thermal DS(ON) properties of the device are optimized for battery power R = 390 mΩ @ V = –1.8 V DS(ON) GS management applications. • Low gate charge, High Power and Current handling Applications capability • Battery management/Charger Application • High performance trench technology for extremely • Load switch low R DS(ON) • FLMP SC75 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact S2 S2 S1 S1 4 3 G1 G1 2 5 1 6 G2 G2 S2 S2 Bottom Drain Contact S1 S1 o MOSFET Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current – Continuous (Note 1a) –2.8 A D – Pulsed –12 Power Dissipation for Single Operation (Note 1a) 1.5 P D (Note 1b) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J stg Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 80 R °C/W θJA Thermal Resistance, Junction-to-Case 5 R θJC Package Marking and Ordering Information .G FDJ1027P 7’’ 8mm 3000 units 2004 FDJ1027P Rev C1 (W)
