FDH400 ,High Voltage General Purpose DiodeFDH400 / FDLL400FDH/FDLL 400COLOR BAND MARKINGDEVICE 1ST BAND 2ND BANDFDLL400 BROWN VIOLETLL-34DO-3 ..
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FDH44N50 ,44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFETFeatures Low Gate Charge Q results in Simple DriveSwitch Mode Power Supplies(SMPS), such as gRequi ..
FDH45N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 45A, 120m?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FDH50N50 ,500V N-Channel UniFETFDH50N50 / FDA50N50 500V N-Channel MOSFETTMUniFETFDH50N50 / FDA50N50 500V N-Channel MOSFET
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KT3 , IGBT-modules
FP50R12KT4 , EconoPIM2 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FDH400
High Voltage General Purpose Diode
FDH400 / FDLL400 FDH/FDLL 400 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL400 BROWN VIOLET LL-34 DO-35THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Voltage General Purpose Diode Sourced from Process 1J. See MMBD1401-1405 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units W Working Inverse Voltage FDH/FDLL400 150 V IV IO Average Rectified Current 200 mA I DC Forward Current 500 mA F Recurrent Peak Forward Current 600 mA i f Peak Forward Surge Current if(surge) Pulse width = 1.0 second 1.0 A Pulse width = 1.0 microsecond 4.0 A Storage Temperature Range -65 to +200 T °C stg T Operating Junction Temperature 175 ° J C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FDH/FDLL 400 P Total Device Dissipation 500 mW D 3.33 Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient 300 R °C/W θJA 1997 Fairchild Semiconductor International
