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FDH27N50
27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET
FDH27N50 August 2002 FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Require- Switch Mode Power Supplies(SMPS), such as ment • PFC Boost Improved Gate, Avalanche and High Reapplied dv/dtTwo-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced r DS(ON)Flyback Converter Buck ConverterReduced Miller Capacitance and Low Input Capacitance High Speed Switching Improved Switching Speed with Low EMI 175°C Rated Junction Temperature Package Symbol JEDEC TO-247 SOURCE DRAIN D GATE G DRAIN (FLANGE) S o Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±30 V GS Drain Current o 27 A Continuous (T = 25 C, V = 10V) C GS I D o Continuous (T = 100 C, V = 10V) 19 A C GS Pulsed (Note 1) 108 A Power dissipation 450 W P D o o Derate above 25 C 3 W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG o Soldering Temperature for 10 seconds 300 (1.6mm from case) C Mounting Torque, 8-32 or M3 Screw 10ibf*in (1.1N*m) Thermal Characteristics o R Thermal Resistance Junction to Case 0.33 C/W θJC o R Thermal Resistance Case to Sink, Flat, Greased Surface 0.24 TYP C/W θCS o R Thermal Resistance Junction to Ambient 40 C/W θJA ©2002 FDH27N50 Rev. A2
