FDG8850NZ ,30V Dual N-Channel PowerTrench?MOSFETapplications as a replacement for bipolar digital transistors and small signal Very small package ..
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FDG8850NZ
30V Dual N-Channel PowerTrench?MOSFET
® FDG8850NZ Dual N-Channel PowerTrench MOSFET April 2007 FDG8850NZ tm ® Dual N-Channel PowerTrench MOSFET 30V,0.75A,0.4Ω Features General Description This dual N-Channel logic level enhancement mode field effect Max r = 0.4Ω at V = 4.5V, I = 0.75A DS(on) GS D transistors are produced using Fairchild’s proprietary, high cell Max r = 0.5Ω at V = 2.7V, I = 0.67A DS(on) GS D density, DMOS technology. This very high density process is Very low level gate drive requirements allowing operation especially tailored to minimize on-state resistance. This device in 3V circuits(V <1.5V) GS(th) has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal Very small package outline SC70-6 MOSFETs. Since bias resistors are not required, this dual digital RoHS Compliant FET can replace several different digital transistors, with differ- ent bias resistor values. S2 G2 Q1 D1 S1 D1 G1 G2 D2 Q2 G1 S2 D2 S1 SC70-6 Pin 1 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±12 V GS Drain Current -Continuous 0.75 I A D -Pulsed 2.2 0.36 Power Dissipation for Single Operation (Note 1a) P W D (Note 1b) 0.30 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient Single operation (Note 1a) 350 θJA °C/W R Thermal Resistance, Junction to Ambient Single operation (Note 1b) 415 θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .50 FDG8850NZ 7” 8mm 3000 units 1 ©2007 FDG8850NZ Rev.B
