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FDG6332C from FSC, Fairchild Semiconductor 1293pcs , SOT363,20V N & P-Channel PowerTrench MOSFETs
Partno Mfg Dc Qty Available
FDG6332C FSC N/a 1293
FDG6332C from FAI, Fairchild Semiconductor 1422pcs , SOT23-6,20V N & P-Channel PowerTrench MOSFETs
FDG6332C from 仙童, Fairchild Semiconductor 260pcs , SOT-363,20V N & P-Channel PowerTrench MOSFETs
FDG6332C from FAIRCHILD, Fairchild Semiconductor 9000pcs , SOT363,20V N & P-Channel PowerTrench MOSFETs

FDG6332CFDG6332C® ®PowerTrench The N & P-Channel MOSFETs are produced using• 0.7 A, 20V.R = 300 m Ω = 4.5 VFairchild Semiconductor’s advanced PowerTrenchR = 400 m Ω = 2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior• –0.6 A, –20V.R = 420 m Ω = –4.5 Vswitching performance.R = 630 m Ω = –2.5 VThese devices have been designed to offerexceptional power dissipation in a very small footprint• Low gate chargefor applications where the bigger more expensiveTSSOP-8 and SSOP-6 packages are impractical.• High performance trench technology for extremely• SC70-6 package: small footprint (51% smaller than• DC/DC converterSSOT-6); low profile (1mm thick)• Load switch• LCD display inverterSG16D25DGPin 1S34o T=25C unless otherwise notedAUnitsVDrain-Source VoltageVVGate-Source Voltage ± ±VIDrain Current– ContinuousAD– PulsedPPower Dissipation for Single Operation WDT, TOperating and Storage Junction Temperature Range–55 to +150 °CJThermal Characteristics°C/WRThermal Resistance, Junction-to-Ambient θDevice MarkingReel SizeTape widthQuantityFDC6332C3000 unitsFDC6332C Rev C1 (W)2001 Fairchild Semiconductor Corporation8mm7’’.32DevicePackage Marking and Ordering InformationJA415(Note 1)STG0.3(Note 1)–22.1–0.60.7(Note 1)GSS1212DSS–2020Q2Q1ParameterSymbolAbsolute Maximum RatingsComplementarySC70-6Electrical Characteristics T = 25°C unless otherwise notedAMinTypUnitsV = 0 V,I = 250 μAVDDrain–Source Breakdown VoltageV = 0 V,I = –250 μADΔBreakdown Voltage TemperatureI = 250 μA,Ref. to 25 °CmV/ °CDCoefficient ΔTI = –250 μA,Ref. to 25 °CJDV = 16 V,V = 0 V 1 μAIZero Gate Voltage Drain CurrentV = –16 V,V = 0 V IGate–Body Leakage, ForwardV = ± 12 V, = 0 V ±IGate–Body Leakage, ReverseV = ± 12V , = 0 V ±V = V = 250 μAVGate Threshold Voltage DV)V = V = –250 μADGate Threshold VoltageΔVID = 250 μA,Ref. To 25 °CmV/ °CTemperature Coefficient3 ΔTI = –250 μA,Ref. to 25 °CJDV = 4.5 V, I =0.7 ARStatic Drain–SourceD m ΩV = 2.5 V, I =0.6 ADOn–ResistanceV = 4.5 V, I =0.7A,T °CD JV = –4.5 V, I = –0.6 AGSDV = –2.5 V, I = –0.5 ADV=–4.5 V, I =–0.6 A,T °CD JV = 5 VI = 0.7 AgForward TransconductanceDSFSV = –5 VI = –0.6ADV = 4.5 V, V = 5 VIOn–State Drain Current1AV = –4.5 V,V = –5 VV=10 V, V= 0 V, f=1.0MHzCInput CapacitanceissV=–10 V, V= 0 V, f=1.0MHz GSV=10 V, V= 0 V, f=1.0MHzCOutput CapacitanceossV=–10 V, V= 0 V, f=1.0MHz GSV=10 V, V= 0 V, f=1.0MHzCReverse Transfer CapacitancerssV=–10 V, V= 0 V, f=1.0MHz GS9tTurn–On Delay Time5ns Q1:VI DVR = 6 ΩGStTurn–On Rise Time7nsr Q2:V=–10 V,I D9tTurn–Off Delay Timensd(off)V= –4.5 V, R = 6 Ω63tTurn–Off Fall TimensfQTotal Gate Chargeg Q1:VI= 0.7 A2 DVR = 6 ΩQGate–Source Charge Q2:V=–10 V,= –0.6 A DQGate–Drain ChargeV= –4.5 V, R ΩGENFDG6332C Rev C1 (W)Q20.4GS = 6 nC Q1 gd0.3DS IQ20.3FornC Q1gs0.24GENGS= 4.5 V, DS Q21.4=10 V,FornC Q11.51.1Q23.41.7Q11.5Q212GENGSQ118DS = –1 AFor Q2251415 Q1GEN= 4.5 V, 115.5DS Q2= 1 A=10 V,Ford(on)10 Q1(Note 2)Switching CharacteristicsDS Q2pF16 GSDS Q1Q224DSQ1pF34 GSDSQ2114DSpF113 GSDS Q1Dynamic Characteristics–2DSGS Q2D(on)DSGS Q11.8DS Q2Q12.8DS700400GS=125630470GSQ2420300247442GS=125293GS400DS(on)GS Q1300180Q2th)GS(–2.8 Q1–1.5–1.2-0.6GSDS Q2, IQ1thGS(1.51.10.6GSDS, I(Note 2)On Characteristics100DS VGSGSSRGSSFnA /IDSGSGSSRGSSFnA100 V /IGSDS–1 Q2DSSGSDSQ1–14 Q214 Q1DSSBVGS–20 Q2DSSBVGS20 Q1Off CharacteristicsMaxTest ConditionsParameterSymbolFDG6332CApplicationsDS(ON)low RGSDS(ON) @ VGSDS(ON) @ VQ2GSDS(ON) @ VGSDS(ON) @ VQ1
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FDG6332C ,20V N & P-Channel PowerTrench MOSFETsApplicationsDS(ON)low RGSDS(ON) @ VGSDS(ON) @ VQ2GSDS(ON) @ VGSDS(ON) @ VQ1
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