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FDG6331L from FAIRCHILD仙, Fairchild Semiconductor 42713pcs , SC70-6,Integrated Load Switch
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FDG6331L FAIRCHILD仙 N/a 42713
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FDG6331LApril 2001 FDG6331L Integrated Load Switch FDG6331LApril 2001 FDG6331L Integrated Load Switch Applications • High performance trench technology for extremely • Power management low R DS(ON)• Load switch • Compact industry standard SC70-6 surface mount package Equivalent Circuit Q2Vin,R1 Vout,C14 3IN +– OUTVDROPON/OFF Vout,C15 2Q1R1,C1 R26 1ON/OFF Pin 1 SC70-6 See Application Circuit oAbsolute Maximum Ratings T =25 C unless otherwise noted ASymbol Parameter Ratings UnitsV Gate-Source Voltage (Q2) ± 8 V INVON/OFF Gate-Source Voltage (Q1) –0.5 to 8 V I Load Current – Continuous (Note 2) –0.8 A Load – Pulsed (Note 2) –2.4 Maximum Power Dissipation (Note 1) 0.3 PD W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 415 R °C/W θJAPackage Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .31 FDG6331L 7’’ 8mm 3000 units FDG6331L Rev B(W) 2001 Fairchild Semiconductor Corporation FDG6331L Applications • High performance trench technology for extremely • Power management low R DS(ON)• Load switch • Compact industry standard SC70-6 surface mount package Equivalent Circuit Q2Vin,R1 Vout,C14 3IN +– OUTVDROPON/OFF Vout,C15 2Q1R1,C1 R26 1ON/OFF Pin 1 SC70-6 See Application Circuit oAbsolute Maximum Ratings T =25 C unless otherwise noted ASymbol Parameter Ratings UnitsV Gate-Source Voltage (Q2) ± 8 V INVON/OFF Gate-Source Voltage (Q1) –0.5 to 8 V I Load Current – Continuous (Note 2) –0.8 A Load – Pulsed (Note 2) –2.4 Maximum Power Dissipation (Note 1) 0.3 PD W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 415 R °C/W θJAPackage Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .31 FDG6331L 7’’ 8mm 3000 units FDG6331L Rev B(W) 2001 Fairchild Semiconductor Corporation FDG6331L Features This device is particularly suited for compact power • –0.8 A, –8 V. R = 260 mΩ @ V = –4.5 V DS(ON) GSmanagement in portable electronic equipment where R = 330 mΩ @ V = –2.5 V DS(ON) GS2.5V to 8V input and 0.8A output current capability are needed. This load switch integrates a small N-Channel R = 450 mΩ @ V = –1.8 V DS(ON) GSpower MOSFET (Q1) that drives a large P-Channel • Control MOSFET (Q1) includes Zener protection for power MOSFET (Q2) in one tiny SC70-6 package. ESD ruggedness (>6KV Human body model) Features This device is particularly suited for compact power • –0.8 A, –8 V. R = 260 mΩ @ V = –4.5 V DS(ON) GSmanagement in portable electronic equipment where R = 330 mΩ @ V = –2.5 V DS(ON) GS2.5V to 8V input and 0.8A output current capability are needed. This load switch integrates a small N-Channel R = 450 mΩ @ V = –1.8 V DS(ON) GSpower MOSFET (Q1) that drives a large P-Channel • Control MOSFET (Q1) includes Zener protection for power MOSFET (Q2) in one tiny SC70-6 package. ESD ruggedness (>6KV Human body model)

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